IEEE Electron Device Lett.にて発表した論文 “Normally-off 400 °C Operation of n- and p-JFETs With a Side-Gate Structure Fabricated by Ion Implantation Into a High-Purity Semi-Insulating SiC Substrate” が “Editor’s pick” に選出

投稿日: 投稿者: StudentStaff

IEEE Electron Device Lett.にて発表した論文 “Normally-off 400 °C Operation of n- and p-JFETs With a Side-Gate Structure Fabricated by Ion Implantation Into a High-Purity Semi-Insulating SiC Substrate”（著者: Masashi Nakajima, Mitsuaki Kaneko, Tsunenobu Kimoto）がEDLの”Editor’s pick”に選ばれました。