前田拓也

前田 拓也 (Takuya Maeda, Ph.D.)
博士研究員 / 日本学術振興会 特別研究員PD
趣味 剣道

研究テーマ

・窒化ガリウム(GaN)の絶縁破壊物性の解明
・ワイドギャップ半導体におけるFranz-Keldysh効果
・Schottky接合/p-n接合の基礎特性評価

経歴

2012年3月 大阪府立大手前高校 理数科 卒業
2016年3月 京都大学 工学部 電気電子工学科 卒業
2018年3月 京都大学 大学院 工学研究科 電子工学専攻 博士前期課程 修了
2020年3月 京都大学 大学院 工学研究科 電子工学専攻 博士後期課程 修了

2018年4月-2020年3月 日本学術振興会 特別研究員DC1
2020年4月–現在 日本学術振興会 特別研究員PD

論文

  • T. Maeda, T. Narita, S. Yamada, T. Kachi, T. Kimoto, M. Horita and J. Suda,
    “Impact Ionization Coefficients in GaN Measured by Above- and Sub-Eg Illuminations for p-/n+ junction”,
    IEDM Technical Digest, 4.2.1-4.2.4 (2019).

  • T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita and J. Suda,
    “Measurement of avalanche multiplication utilizing Franz-Keldysh effect in GaN p-n junction diodes with double-side-depleted shallow bevel termination”,
    Applied Physics Letters, 115, 142101 (2019).
    [featured as APL Editor’s Pick]

  • T. Maeda, X. Chi, H. Tanaka, M. Horita, J. Suda and T. Kimoto,
    “Franz-Keldysh effect in 4H-SiC p-n junction diode under high electric field along the <11-20> direction”,
    Japanese Journal of Applied Physics 58, 091007 (2019).

  • T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita and J. Suda,
    “Estimation of Impact Ionization Coefficient in GaN by Photomultiplication Measurements Utilizing Franz-Keldysh Effect”,
    Proceedings of the 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), pp. 59-62 (2019).

  • T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita and J. Suda,
    “Design and Fabrication of GaN p-n Junction Diodes with Negative Beveled-Mesa Termination”,
    IEEE Electron Device Letters, 40, 6 (2019).

  • T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita and J. Suda,
    “Shockley-Read-Hall Lifetime in Homoepitaxial p-GaN Extracted from Recombination Current in GaN p-n+ Junction Diodes”,
    Japanese Journal of Applied Physics, 58, SCCB14 (2019).
    [selected as IWN2018 top 40 articles , OPEN ACCESS]

  • T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita and J. Suda,
    “Parallel-Plane Breakdown Fields of 2.8-3.5 MV/cm in GaN-on-GaN p-n Junction Diodes with Double-Side-Depleted Shallow Bevel Termination”,
    IEDM Technical Digest, 30.1.1-30.1.4 (2018).

  • T. Maeda, X. Chi, M. Horita, J. Suda and T. Kimoto,
    “Phonon-assisted optical absorption due to Franz-Keldysh effect in 4H-SiC p-n junction diode under high reverse bias voltage”,
    Applied Physics Express 11, 091302 (2018).

  • T. Maeda, T. Narita, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita and J. Suda,
    “Franz-Keldysh effect in GaN p-n junction diode under high reverse bias voltage”,
    Applied Physics Letters, 112, 252104, (2018).

  • T. Maeda, M. Okada, M. Ueno, Y. Yamamoto, T. Kimoto, M. Horita and J. Suda,
    “Temperature dependence of barrier height in Ni/n-GaN Schottky barrier diode”,
    Applied Physics Express 10, 051002, (2017).
    [応用物理学会論文奨励賞 受賞]

  • T. Maeda, M. Okada, M. Ueno, Y. Yamamoto, M. Horita and J. Suda,
    “Franz-Keldysh effect in n-type GaN Schottky barrier diode under high reverse bias voltage”,
    Applied Physics Express 9, 091002, (2016).
    [featured as APEX spotlights2016]

    [共著論文]
  • M. Hara, S. Asada, T. Maeda and T. Kimoto,
    “Forward thermionic field emission transport and significant image force lowering caused by high electric field at metal/heavily-doped SiC Schottky interfaces”,
    Applied Physics Express 13, 041001 (2020).

国際学会発表

  • T. Maeda, T. Narita, S. Yamada, T. Kachi, T. Kimoto, M. Horita and J. Suda,
    “Impact Ionization Coefficients in GaN Measured by Above- and Sub-Eg Illuminations for p-/n+ junction”,
    The 65th International Electron Devices Meeting (IEDM2019),
    San Francisco (USA), December. 2019. 4.2. Oral.
    [The 18th IEEE EDS Japan Joint Chapter Student Award受賞]

  • T. Maeda, X. Chi, H. Tanaka, M. Horita, J. Suda and T. Kimoto,
    “Photocurrent induced by Franz-Keldysh effect in 4H-SiC p-n junction diodes under high electric field along <11-20> direction”,
    The 18th International Conference on Silicon Carbide and Related Materials (ICSCRM2019), Kyoto, (Japan), October. 2019. We-3B-07. Oral.

  • T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita and J. Suda,
    “High Avalanche Capability in GaN p-n Junction Diodes Realized by Shallow Beveled-Mesa Structure Combined with Lightly Mg-Doped p-Layers”,
    The 51st International Conference on Solid-State Devices and Materials (SSDM2019), Nagoya, (Japan), September. 2019. K-1-05. Oral.

  • T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita and J. Suda,
    “Estimation of Impact Ionization Coefficient in GaN and its Temperature Dependence by Photomultiplication Measurements Utilizing Franz-Keldysh Effect”,
    The 13th International Conference on Nitride Semiconductors (ICNS13), 
    Bellevue (USA), July. 2019. B04-07. Oral.

  • T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita and J. Suda,
    “Estimation of Impact Ionization Coefficient in GaN by Photomultiplication Measurements Utilizing Franz-Keldysh Effect”,
    The 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD2019),
    Shanghai (China), May. 2019. B1L-A-1. Oral.
    [ISPSD2019 Charitat Award 受賞]

  • T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita and J. Suda,
    “Parallel-Plane Breakdown Fields of 2.8-3.5 MV/cm in GaN-on-GaN p-n Junction Diodes with Double-Side-Depleted Shallow Bevel Termination”,
    The 64th International Electron Devices Meeting (IEDM2018),
    San Francisco (USA), December. 2018. 30.1. Oral.
    [The 17th IEEE EDS Japan Joint Chapter Student Award 受賞]

  • T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita and J. Suda,
    “Shockley-Read-Hall Lifetime in Homoepitaxial p-GaN Extracted from the Recombination Current in GaN p-n Junction Diodes”,
    International Workshop on Nitride Semiconductors 2018 (IWN2018),
    Kanazawa (Japan), November. 2018. CR10-5. Oral.

  • T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita and J. Suda,
    “Temperature Dependence of Avalanche Multiplication in GaN PN Junction Diodes Measured by Light Absorption Due to Franz-Keldysh Effect”,
    International Workshop on Nitride Semiconductors 2018 (IWN2018),
    Kanazawa (Japan), November. 2018. ED6-3. Oral.
    [IWN2018 Student Award 受賞]

  • T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita and J. Suda,
    “Measurement of Avalanche Multiplication Factor in GaN p-n Junction Diode Using Sub-bandgap Light Absorption Due to Franz-Keldysh Effect”,
    The 50th International Conference on Solid-State Devices and Materials (SSDM2018),
    Tokyo, (Japan), September. 2018. D-7-02. Oral.

  • T. Maeda, X. Chi, M. Horita, J. Suda and T. Kimoto,
    “Photocurrent induced by Franz-Keldysh effect in a 4H-SiC p-n junction diode under high reverse bias voltage”,
    The 12th European Conference on Silicon Carbide & Related Materials (ECSCRM2018),
    Birmingham, (UK), September. 2018. TU.02b.01. Oral.

  • T. Maeda, M. Okada, M. Ueno, Y. Yamamoto, T. Kimoto, M. Horita, and J. Suda,
    “Temperature dependence of barrier height in Ni/n-GaN Schottky barrier diode consistently obtained by C-V, I-V and IPE measurements”,
    2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2018),
    Fukuoka, (Japan), July. 2018. A7-3. Oral.

  • T. Maeda, M. Okada, M. Ueno, Y. Yamamoto, T. Narita, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita and J. Suda,
    “Franz-Keldysh effect in GaN Schottky barrier diodes and p-n junction diodes under high reverse bias voltage”,
    The 60th Electronic Materials Conference (EMC60),
    Santa Barbara, (USA), June. 2018. B03. Oral.

  • T. Maeda, M. Okada, M. Ueno, Y. Yamamoto, T. Kimoto, M. Horita and J. Suda,
    “Temperature dependence of Schottky barrier height of Ni/n-GaN consistently obtained by C-V and forward I-V measurements”,
    The 12th International Conference on Nitride Semiconductors (ICNS12),
    Strasbourg, (France), July. 2017. C10.6. Oral.

  • T. Maeda, M. Okada, M. Ueno, Y. Yamamoto, M. Horita and J. Suda,
    “Photocurrent induced by sub-bandgap wavelength light absorption due to Franz-Keldysh effect in n-type GaN Schottky barrier diode under large reverse bias”,
    International Workshop on Nitride Semiconductors 2016 (IWN2016),
    Florida, (USA), October. 2016. D1.7.05. Oral.

    [共著発表]
  • D. Stefanakis, X. Chi, T. Maeda, M. Kaneko and T. Kimoto,
    “Impact Ionization Coefficients for 4H-SiC on a-face (11-20) and their Temperature Variations”,
    The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019), Okinawa, (Japan), November. 2019. ThP-ED-14. Poster.

  • M. Hara, S. Asada, T. Maeda and T. Kimoto,
    “Significant Image Force Lowering at Metal/Heavily-Doped SiC Interfaces”,
    The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019), Okinawa, (Japan), November. 2019. ED3-4. Oral.

  • D. Stefanakis, X. Chi, T. Maeda, M. Kaneko and T. Kimoto,
    “Temperature Dependence of Impact Ionization Coefficients in 4H-SiC along <11-20> Direction”,
    18th International Conference on Silicon Carbide & Related Materials (ICSCRM2019), Kyoto, (Japan), October. 2019. We-3A-01. Oral.

  • M. Hara, S. Asada, T. Maeda and T. Kimoto,
    “Forward Thermionic Field Emission Current and Barrier Height Lowering in Heavily-Doped 4H-SiC Schottky Barrier Diodes”,
    18th International Conference on Silicon Carbide & Related Materials (ICSCRM2019), Kyoto, (Japan), October. 2019. We-3A-02. Oral.

  • T. Narita, K. Tomita, Y. Tokuda, T. Kogiso, T. Maeda, M. Horita, M. Kanechika, H. Ueda, T. Kachi and J. Suda,
    “Growth of P-Type GaN Layers with Low Mg Concentrations by Using MOVPE and the Application to Vertical Power Devices”,
    13th International Conference on Nitride Semiconductors (ICNS13), 
    Bellevue (USA), July. 2019. G05.01. Oral. [Invited]

受賞歴

2020年3月 京都大学総長賞 (学業) 受賞 
2020年2月 The 18th IEEE EDS Japan Joint Chapter Student Award (IEDM) 受賞
2019年8月 第41回(2019年)応用物理学会論文奨励賞 受賞
2019年5月 ISPSD2019 Charitat Award 受賞
2019年1月 The 17th IEEE EDS Japan Joint Chapter Student Award (IEDM) 受賞
2018年11月 IWN2018 Student Award 受賞
2018年3月 第43回(2017年秋季)応用物理学会 講演奨励賞 受賞
2017年11月 第36回電子材料シンポジウム EMS賞 受賞
2017年6月 原島博学術奨励賞 受賞
2016年5月 第8回窒化物半導体結晶成長講演会 発表奨励賞 受賞
2015年11月 電子情報通信学会 電子デバイス(ED)研究会 論文発表奨励賞 受賞
2015年8月 第4回TIAパワーエレクトロニクスサマースクール 奨励賞 受賞

(最終編集日: 2020/4)