International Journals

T. Matsuoka, M. Kaneko, and T. Kimoto,
“Physical properties of sulfur double donors in 4H-SiC introduced by ion implantation,”
Jpn. J. Appl. Phys., 62, 010908 (2023).

M. Hara, M. Kaneko, and T. Kimoto,
“Enhanced tunneling current and low contact resistivity at Mg contacts on heavily phosphorus-ion-implanted SiC,”
Appl. Phys. Express, 16, 021003 (2023).

M. Kaneko, A. Tsibizov, T. Kimoto, and U. Grossner,
“Nearly Ideal Breakdown Voltage Observed in Lateral p-i-n Diodes 
Fabricated on a SiC High-Purity Semi-Insulating Substrate,”
IEEE Trans. Electron Devices, 70, 2153 (2023).

T. Kitawaki, M. Hara, H. Tanaka, M. Kaneko, and T. Kimoto,
“Impact of the split-off band on the tunneling current at metal/heavily-doped p-type SiC Schottky interfaces,”
Appl. Phys. Express, 16, 031005 (2023).

K. Ito, M. Horita, J. Suda, and T. Kimoto,
“High Hall electron mobility in the inversion layer of 4H-SiC (0001)/SiO₂ interfaces annealed in POCl₃,”
Appl. Phys. Express, 16, 071001 (2023).

M. Kaneko, H. Takashima, K. Shimazaki, S. Takeuchi, and T. Kimoto,
“Impact of the oxidation temperature on the density of single-photon sources formed at SiO2/SiC interface,”
APL Mater., 11, 091121 (2023).

R. Ishikawa, H. Tanaka, M. Kaneko, and T. Kimoto,
”Experimental and Theoretical Study on Anisotropic Electron Mobility in 4H-SiC,”
Phys. Status Solidi B 260, 2300275 (2023).

X. Chi, K. Tachiki, K. Mikami, M. Kaneko, and T. Kimoto, 
“Different temperature dependence of mobility in n- and p-channel 4H-SiC MOSFETs,”
Jpn. J. Appl. Phys. 62, 110906 (2023).

Review Article

F. La Via, D. Alquier, F. Giannazzo, T. Kimoto, P. Neudeck, H. Ou, A. Roncaglia, S. E. Saddow, and S. Tudisco,
“Emerging SiC applications beyond power electronic devices,”
Micromachines, 14, 1200 (2023).

Conference Proceedings

M. Kaneko, M. Nakajima, Q. Jin, N. Maeda, and T. Kimoto,
“350˚C operation of SiC complementary JFET logic gates,”,
Proc. of 2023 IEEE CPMT Symposium Japan (ICSJ) (Kyoto, 2023), 180.

T. Kimoto,
“Fundamentals, Commercialization, and Future Challenges of SiC Power Devices,”
Proc. 2023 IEEE Int. Meeting for Future of Electron Devices, Kansai (Kyoto, 2023), pp.1-4.

International Presentations

X. Chi, K. Tachiki, K. Mikami, M. Kaneko, and T. Kimoto,
“Different temperature dependence of mobility in n- and p-channel 4H-SiC MOSFETs,”
Mini-Conference on Next Generation Materials for Ultra Performance Microwave and Power Switching Applications (Online, 2023), 1-1.

K. Mikami, M. Kaneko, and T. Kimoto,
“Fundamental study on SiC p-channel MOSFETs,”
Mini-Conference on Next Generation Materials for Ultra Performance Microwave and Power Switching Applications (Online, 2023), 1-2.

T. Kimoto,
“Physics and Innovation in SiC Power Devices” (invited),
2023 Ampere Workshop on SiC Power Devices (Lyon, 2023), I.

H. Tanaka, T. Kimoto, and N. Mori,
“Impacts of Band Structures and Scattering Processes on High-field Carrier Transport in Wide Bandgap Semiconductors” (invited),
Int. Workshop on Computational Nanotechnology 2023 (Barcelona, 2023), Semiclassical electron transport 1.

R. Ishikawa, H. Tanaka, M. Kaneko, and T. Kimoto,
“Anisotropic Electron and Hole Mobilities in 4H-SiC Bulk Crystals,”
65th Electronic Materials Conference (Santa Barbara, USA, 2023), S01.

T. Kimoto,
“Innovation and Physics of SiC Power Devices for Higher Energy
Efficiency” (plenary),
2023 Asia-Pacific Workshop on Advanced Semiconductor Devices (Yokohama,
2023), S-2.

T. Kimoto, K. Tachiki, K. Mikami, and M. Kaneko,
“Progress of SiC MOSFETs and JFETs beyond Power Applications” (invited),
IME Workshop on Wide Bandgap Semiconductors 2023, I.

T. Kimoto, H. Niwa, X. Chi, M. Hara, R. Ishikawa, H. Tanaka, and M. Kaneko,
“High-Field Phenomena in SiC Material and Devices” (invited),
Symposium on Silicon Carbide as Quantum-Classical Platform (Erlangen,
Germany, 2023), 4-1.

T. Kimoto and M. Kaneko,
“Fundamentals of SiC Complementary MOSFETs and JFETs for Advanced IC
Applications” (invited),
Int. Conf. on Silicon Carbide and Related Materials 2023 (Sorrento,
Italy, 2023), Tutorial, 1.

Y. Yonezawa, M. Belanche, M. Kato, K. Murata, C. Csato, T. Nishimura, K.
Narumi, T. Ohshima, K. Nakayama, M. Sometani, I. Kobayashi, T. Morimoto,
S. Harada, T. Kato, T. Shimizu, C. Martinella, M. Rüb, H. Tsuchida, U.
Grossner, and T. Kimoto,
“Development of Elemental Technologies for SiC Superjunction Structure
and SiC-IGBT Voltage Withstanding Layer” (invited),
Int. Conf. on Silicon Carbide and Related Materials 2023 (Sorrento,
Italy, 2023), Devices 3-1.

T. Kumazawa, M. Kumita, H. Fujioka, H. Tomita, T. Nishiwaki, M. Okuda,
K. Naydenov, Q. Wang, H. Fujiwara, T. Kimoto, and F. Udrea,
“Low On-resistance (< 0.7 mΩcm2) 4H-SiC Vertical FinFETs with Increased
Threshold Voltage by Using p-type Poly-Si Gate” (invited),
Int. Conf. on Silicon Carbide and Related Materials 2023 (Sorrento,
Italy, 2023), Devices 5-1.

X. Chi, K. Tachiki, K. Mikami, M. Kaneko, and T. Kimoto,
“Different temperature dependence of mobility in n- and p-channel 4H-SiC MOSFETs,”
Int. Conf. on Silicon Carbide and Related Materials 2023 (Sorrento, Italy, 2023), MOS I-2.

M. Kaneko, H. Takashima, S. Takeuchi, and T. Kimoto,
“Density control of single-photon sources formed at a SiO2/SiC interface” (invited poster),
Int. Conf. on Silicon Carbide and Related Materials 2023 (Sorrento, Italy, 2023), D.01.

K. Mikami, M. Kaneko, and T. Kimoto,
“High-mobility SiC p-channel MOSFETs on nonpolar faces,”
Int. Conf. on Silicon Carbide and Related Materials 2023 (Sorrento, Italy, 2023), MOS II-1.

M. B. Guadas, Y. Yonezawa, I. M. Hidalgo, R. Heller, C. Martinella, C.
Csato, M. Rüb, M. Kato, K. Murata, H. Tsuchida, T. Kimoto, and U. Grossner,
“High-energy ion channeling for deep implantation of Al into 4H-SiC,”
Int. Conf. on Silicon Carbide and Related Materials 2023 (Sorrento,
Italy, 2023), Process 4-3.

Q. Jin, C. Koo, M. Kaneko, and T. Kimoto,
“Carrier compensating center density in n-type layers formed by ion implantation into high-purity semi-insulating 4H-SiC substrates” (poster),
Int. Conf. on Silicon Carbide and Related Materials 2023 (Sorrento,
Italy, 2023), Tu.C.8.

S. Shibata, T. Matsuoka, M. Kaneko, and T. Kimoto,
“Over 600℃ operation of a bottom-gate p-JFET with double-well structure
fabricated by ion implantation on an n-type SiC epilayer,”
Int. Conf. on Silicon Carbide and Related Materials 2023 (Sorrento,
Italy, 2023), Devices 3-5.

R. Ishikawa, M. Kaneko, and T. Kimoto,
“Estimation of electron drift mobility along the c-axis in 4H-SiC by
using vertical Schottky barrier diodes” (poster),
Int. Conf. on Silicon Carbide and Related Materials 2023 (Sorrento,
Italy, 2023), We.C.2.

M. Kaneko, T. Matsuoka, and T. Kimoto,
“A Sulfur-doped n-JFET for a reduced logic threshold voltage shift in a SiC CJFET inverter,”
Int. Conf. on Silicon Carbide and Related Materials 2023 (Sorrento, Italy, 2023), We.D.9.

M. Takayasu, T. Matsuoka, M. Hara, M. Kaneko, and T. Kimoto, 
“Carrier transport and barrier height of S⁺-implanted SiC Schottky barrier diodes,” 
Int. Conf. on Silicon Carbide and Related Materials 2023 (Sorrento, Italy, 2023), Process 6-1.

M. Hara, M. Kaneko, and T. Kimoto, 
“Reduction of contact resistivity at non-alloyed SiC ohmic contacts based on understanding of tunneling phenomena,” 
Int. Conf. on Silicon Carbide and Related Materials 2023 (Sorrento, Italy, 2023), Process 6-2.

K. Kuwahara, T. Kitawaki, M. Hara, M. Kaneko, and T. Kimoto, 
“Formation of non-alloyed ohmic contacts on heavily Al⁺-implanted p-type SiC,”
Int. Conf. on Silicon Carbide and Related Materials 2023 (Sorrento, Italy, 2023), Process 6-3.

M. Kaneko, N. Maeda, and T. Kimoto,
“Minimum Channel Length for Suppressing Short-Channel Effects in SiC JFETs,”
Int. Conf. on Silicon Carbide and Related Materials 2023 (Sorrento, Italy, 2023), Th.A.9.

S. Kozakai, H. Fujii, M. Kaneko and T. Kimoto,
“Depth profiles of deep levels in the whole band gap generated by reactive ion etching near the surface of 4H-SiC” (invited),
Int. Conf. on Silicon Carbide and Related Materials 2023 (Sorrento, Italy, 2023), Defects 4-1.

S. Toshimitsu, K. Mikami, K. Tachiki, M. Kaneko, and T. Kimoto,
“SiC n-channel MOSFETs fabricated on a high-purity semi-insulating substrate,”
Int. Conf. on Silicon Carbide and Related Materials 2023 (Sorrento, Italy, 2023), Devices 5-3.

T. Kimoto, K. Tachiki, K. Mikami, X. Chi, and M. Kaneko,
“Physics and Performance Improvement of SiC MOSFETs” (invited),
2023 Int. Workshop on Dielectric Thin Films for Future Electron Devices:
Science and Technology (Kanazawa, 2023), S1-1.

T. Kimoto,
“SiC Semiconductor for Sustainable Development” (plenary),
Int. Conf. Advanced Electromaterials 2023 (Jeju, Korea, 2023), PL-4.

T. Kimoto,
“Crystal Growth and Performance Improvement of SiC MOSFETs” (invited),
3rd Nucleation and Growth Research Conference (Kyoto, 2023), TFNM-1-3.

T. Kimoto,
Fundamentals, Commercialization, and Future Challenges of SiC Power
Devices” (special lecture),
IEEE 2023 Int. Meeting for Future of Electron Devices, Kansai (Kyoto,
2023), IN-01.

M. Kaneko, M. Nakajima, Q. Jin, N. Maeda, and T. Kimoto,
“350˚C operation of SiC complementary JFET logic gates” (invited),
12th IEEE CPMT Symposium Japan (ICSJ2023) (Kyoto, 2023) 16-01.