International Journals

T. Maeda, T. Narita, S. Yamada, T. Kachi, T. Kimoto, M. Horita, and J. Suda,
“Breakdown electric field of GaN p⁺-n and p-n⁺ junction diodes with various doping concentrations,”
IEEE Electron Device Lett., 43, 96 (2022).

K. Mikami, K. Tachiki, K. Ito, and T. Kimoto,
“Body doping dependence of field-effect mobility in both n- and p-channel 4H-SiC metal-oxide-semiconductor field-effect transistors with nitrided gate oxides,”
Appl. Phys. Express, 15, 036503 (2022).

K. Takahashi, H. Tanaka, M. Kaneko, and T. Kimoto,
“Carrier Trapping Effects on Forward Characteristics of SiC p-i-n Diodes Fabricated on High-Purity Semi-Insulating Substrates,”
IEEE Trans. Electron Devices, 69, 1989 (2022).

M. Hara, H. Tanaka, M. Kaneko, and T. Kimoto,
“Critical electric field for transition of thermionic field emission/field emission transport in heavily doped SiC Schottky barrier diodes,” 
Appl. Phys. Lett., 120, 172103 (2022).

T. Hosoi, M. Ohsako, K. Moges, K. Ito, T. Kimoto, M. Sometani, M. Okamoto, A. Yoshigoe, T. Shimura, and H. Watanabe,
“Impact of post-nitridation annealing in CO₂ ambient on threshold voltage stability in 4H-SiC metal-oxide-semiconductor field-effect transistors,”
Appl. Phys. Express, 15, 061003 (2022).

H. Tanaka, T. Kimoto, and N. Mori,
“Simulation analysis of high-field carrier transport in wide-bandgap semiconductors considering tunable band structures and scattering processes,”
J. Appl. Phys., 131, 225701 (2022).

K. Tachiki, K. Mikami, K. Ito, M. Kaneko, and T. Kimoto,
“Mobility enhancement in heavily doped 4H-SiC (0001), (11-20), and (1-100) MOSFETs via an oxidation-minimizing process,”
Appl. Phys. Express, 15, 071001 (2022).

M. Kaneko, M. Nakajima, Q. Jin, and T. Kimoto,
“SiC Complementary Junction Field-Effect Transistor Logic Gate Operation at 623 K,”
IEEE Electron Device Lett., 43, 997 (2022).

K. Ito, M. Horita, J. Suda, and T. Kimoto,
“Effective channel mobility in phosphorus-treated 4H-SiC (0001) metal-oxide-semiconductor field-effect transistors with various p-body doping concentrations,“
Jpn. J. Appl. Phys., 61, 098001 (2022).

K. Ito and T. Kimoto,
“Mobility degradation under a high effective normal field in an inversion layer of 4H-SiC (0001) metal–oxide–semiconductor structures annealed in POCl₃,“
Appl. Phys. Express, 15, 121006 (2022).

Review Article

T. Kimoto,
“High-voltage SiC power devices for improved energy efficiency” (Review),
Proc. Japan Academy, Ser. B, 98, 161 (2022).

Conference Proceedings

T. Kimoto, K. Tachiki, A. Iijima, and M. Kaneko,
“Performance Improvement and Reliability Physics in SiC MOSFETs,”
Proc. of IEEE Int. Reliability Phys. Sympo. (Dallas/Virtual, 2022),
5B.1.1 – 5B.1.7.

F. Udrea, K. Naydenov, H. Kang, T. Kato, E. Kagoshima, H. Fujioka, H. Tomita, T. Nishiwaki, H. Fujiwara, and T.Kimoto,
“Experimental Demonstration, Challenges, and Prospects of the Vertical SiC FinFET,”
Proc. IEEE 34th Int. Symp. on Power Semiconductor Devices & ICs (ISPSD 2022) (Vancouver, 2022), 2-1.

International Presentations

T. Kimoto, K. Tachiki, A. Iijima, and M. Kaneko,
“Performance Improvement and Reliability Physics in SiC MOSFETs” (invited),
IEEE Int. Reliability Phys. Sympo. (Dallas/Virtual, 2022), 5B.1.

T. Kimoto,
“Defect Electronics in SiC Power Semiconductor” (invited),
2022 Physics Colloquium in Erlangen (Erlangen/Virtual, 2022), I-1.

T. Kimoto, A. Iijima, and M. Kaneko,
“Physical Understanding and Prevention of Bipolar Degradation in SiC Power Devices” (invited),
241st Electrochemical Society Meeting (Vancouver, 2022), E02-1135.

T. Kimoto,
“Progress and Future Challenges in SiC Power Semiconductor” (invited),
ETH Power Electronics Colloquium 2022 (Zurich, 2022).

M. Kaneko, M. Nakajima, Q. Jin, and T. Kimoto,
“High-Temperature Operation of SiC JFET-Based Complementary Circuits” (invited),
2022 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Virtual, 2022), B4-3.

F. Udrea, K. Naydenov, H. Kang, T. Kato, E. Kagoshima, H. Fujioka, H. Tomita, T. Nishiwaki, H. Fujiwara, and T. Kimoto,
“Experimental Demonstration, Challenges, and Prospects of the Vertical SiC FinFET,”
IEEE 34th Int. Symp. on Power Semiconductor Devices & ICs (ISPSD 2022) (Vancouver, 2022), 2-1.

T. Kimoto, K. Tachiki, K. Ito, K. Mikami, M. Kaneko, M. Horita, and J. Suda,
“High Mobility in SiC MOSFETs with Heavily-Doped p-Bodies” (invited),
14th Topical Workshop on Heterostructure Microelectronics (TWHM 2022) (Hiroshima, 2022), 2-2.

K. Ito, M. Horita, J. Suda, and T. Kimoto,
“Influence of electrons trapped at the interface states on Hall electron mobility in SiC/SiO₂ inversion layers”,
Int. Conf. on Silicon Carbide and Related Materials 2022 (Davos, Switzerland, 2022), Mo-3-A.2.

K. Mikami, K. Tachiki, M. Kaneko, and T. Kimoto,
“High-quality MOS interface on 4H-SiC (11-20) formed by the oxidation-minimizing process”,
Int. Conf. on Silicon Carbide and Related Materials 2022 (Davos, Switzerland, 2022), Mo-4-B.4.

M. Hara, M. Kaneko, and T. Kimoto,
“Enhanced tunneling current at Schottky contacts formed on heavily P⁺-implanted SiC”,
Int. Conf. on Silicon Carbide and Related Materials 2022 (Davos, Switzerland, 2022), Tu-4-B.1.

H. Fujii, K. Kanegae, M. Kaneko, and T. Kimoto,
“Depth profile analyses of deep levels near 4H-SiC p⁺-n junctions formed by Al ion implantation”,
Int. Conf. on Silicon Carbide and Related Materials 2022 (Davos, Switzerland, 2022), We-3-B.1.

T. Kitawaki, M. Hara, H. Tanaka, M. Kaneko, and T. Kimoto,
“Contribution of a split-off band to tunneling current in heavily-doped p-type SiC Schottky barrier diodes”,
Int. Conf. on Silicon Carbide and Related Materials 2022 (Davos, Switzerland, 2022), We-4-B.2.

M. Kaneko, M. Nakajima, Q. Jin, and T. Kimoto,
“High temperature operation of SiC complementary JFET logic gates fully fabricated by ion implantation” (invited),
Int. Conf. on Silicon Carbide and Related Materials 2022 (Davos, Switzerland, 2022), Th-2-A.1.

T. Matsuoka, M. Kaneko, and T. Kimoto,
“Anomalously high electron mobility in S-implanted n-type SiC”,
Int. Conf. on Silicon Carbide and Related Materials 2022 (Davos, Switzerland, 2022), Th-2-A.2.

T. Hosoi, M. Ohsako, K. Moges, K. Ito, T. Kimoto, M. Sometani, M. Okamoto, A. Yoshigoe, T. Shimura, and H. Watanabe,
“CO₂ post-nitridation annealing for improving immunity to charge trapping in SiC MOS devices”,
Int. Conf. on Silicon Carbide and Related Materials 2022 (Davos, Switzerland, 2022), Tu-2-A.3.

S. Shibata, T. Matsuoka, M. Kaneko, and T. Kimoto,
“Remarkable improvement of threshold voltage controllability in ion-implantation-based SiC JFETs by adopting bottom-gate structure”,
Int. Conf. on Silicon Carbide and Related Materials 2022 (Davos, Switzerland, 2022), Th-2-A.5.

R. Ishikawa, H. Tanaka, M. Kaneko, and T. Kimoto,
“Anisotropy of hole mobility in 4H-SiC over wide ranges of acceptor concentration and temperature”,
Int. Conf. on Silicon Carbide and Related Materials 2022 (Davos, Switzerland, 2022), Fr-2-A.3.

A. Inoue, M. Kaneko, Y. Yonezawa, and T. Kimoto,
“Critical angle of MeV Al-ion channeling implantation into SiC”,
Int. Conf. on Silicon Carbide and Related Materials 2022 (Davos, Switzerland, 2022), Fr-2-B.2.

M. Kaneko, M. Hara, M. Nakajima, Q. Jin, and T. Kimoto,
“Ion Implantation Technology in SiC for Advanced Electron Devices” (invited),
Int. Conf. on Ion Implantation Technology 2022 (San Diego, 2022), TU1.04.

T. Maeda, T. Narita, S. Yamada, T. Kachi, T. Kimoto, M. Horita, and J. Suda,
“Temperature dependence of impact ionization coefficients in GaN,”
International Workshop on Nitride Semiconductors 2022 (Berlin, Germany, 2022), AT 235.

K. Kanegae, T. Narita, K. Tomita, T. Kachi, M. Horita, T. Kimoto, and J. Suda,
“Percentage of C_N acceptors to residual carbon atoms in n-type GaN homoepitaxial layers,”
International Workshop on Nitride Semiconductors 2022 (Berlin, Germany, 2022), AT 246.

T. Kimoto,
“Progress and Future Challenges of SiC Power Devices” (invited),
IME Workshop on SiC Power Devices 2022 (Singapore/Virtual, 2022), I.

T. Kimoto, K. Tachiki, K. Ito, K. Mikami, and M. Kaneko,
“Progress and Future Challenges in SiC MOSFETs” (invited),
10th Asia-Pacific Workshop on Widegap Semiconductors 2022 (Taoyuan/Virtual, 2022), OTD-21.