International Journals

N. Kanegami, Y. Nishi, and T. Kimoto,
“Unique resistive switching phenomena exhibiting both filament-type and interface-type switching in Ti/Pr_0.7Ca_0.3MnO_3-δ/Pt ReRAM cells,”
Appl. Phys. Lett., 116, 013501 (2020).

M. Kaneko, K. Hirai, T. Kimoto, and J. Suda,
“Multi-cycle RHEED oscillation under nitrogen supply in alternative source supply AlN growth by rf-MBE,”
Appl. Phys. Express, 12, 025503 (2020).

A. Iijima and T. Kimoto,
“Estimation of the critical condition for expansion/contraction of single Shockley stacking faults in 4H-SiC PiN diodes,”
Appl. Phys. Lett., 116, 092105 (2020).

S. Asada, J. Suda, and T. Kimoto,
“Temperature Dependence of Conductivity Modulation in SiC Bipolar Junction Transistors,”
IEEE Trans. Electron Devices, 67, pp. 1699-1704 (2020).

S. Yamashita and T. Kimoto,
“Analysis of carrier lifetimes in n-type 4H-SiC by rate equations,”
Appl. Phys. Express, 13, 011006 (2020).

M. Hara, S. Asada, T. Maeda, and T. Kimoto,
“Forward thermionic field emission transport and significant image force lowering caused by high electric field at metal/heavily-doped SiC Schottky interfaces,”
Appl. Phys. Express, 13, 041001 (2020).

H. Tanaka, T. Kimoto, and N. Mori,
“Theoretical analysis of band structure effects on impact ionization coefficients in wide-bandgap semiconductors,”
Appl. Phys. Express, 13, 041006 (2020).

H. Akita and T. Kimoto,
“Rapid revolution speed control of the brushless DC motor for Automotive LIDAR applications,”
IEICE Trans. Electron., E103-C, 324 (2020).

M. Kaneko, X. Chi, and T. Kimoto,
“Tunneling Current in 4H-SiC p-n Junction Diodes,”
IEEE Trans. Electron Devices, 67, pp. 3329-3334 (2020).

T. Kobayashi, T. Okuda, K. Tachiki, K. Ito, Y. Matsushita, and T. Kimoto,
“Design and formation of SiC (0001)/SiO₂ interfaces via Si deposition followed by low-temperature oxidation and high-temperature nitridation,”
Appl. Phys. Express, 13, 091003 (2020).

T. Hosoi, S. Azumo, Y. Kashiwagi, S. Hosaka, K. Yamamoto, M. Aketa, H. Asahara, T. Nakamura, T. Kimoto, T. Shimura, and H. Watanabe,
“Comprehensive and systematic design of metal/high-k gate stack for high-performance and highly reliable SiC power MOSFET,”
Jpn. J. Appl. Phys., 59, 021001 (2020).

D. Nakamura and T. Kimoto,
“Transformation of hollow-core screw dislocations: transitional configuration of superscrew dislocations,”
Jpn. J. Appl. Phys., 59, 095502 (2020).

D. Stefanakis, X. Chi, T. Maeda, M. Kaneko, and T. Kimoto,
“Experimental Determination of Impact Ionization Coefficients Along <1120> in 4H-SiC,”
IEEE Trans. on Electron Devices, 67, pp. 3740-3744 (2020).

T. Umeda, Y. Nakano,  E. Higa,  T. Okuda,  T. Kimoto,  T. Hosoi, H. Watanabe,  M. Sometani, and  S. Harada,
“Electron-spin-resonance and electrically detected-magnetic-resonance characterization on P_bC center in various 4H-SiC(0001)/SiO₂ interfaces,”
J. Appl. Phys., 127, 145301 (2020).

K. Ito, T. Kobayashi, and T. Kimoto,
“Effect of quantum confinement on the defect-induced localized levels in 4H-SiC(0001)/SiO₂ systems,”
J. Appl. Phys., 128, 095702 (2020).

M. Kaneko, M. Nakajima, Q. Jin, and T. Kimoto,
“Experimental Study on Short-Channel Effects in Double-Gate Silicon
Carbide JFETs,”
IEEE Trans. Electron Devices, 67, pp. 4538-4540 (2020).

K. Tachiki, M. Kaneko, T. Kobayashi, and T. Kimoto,
“Formation of high-quality SiC(0001)/SiO₂ structures by excluding oxidation process with H₂ etching before SiO₂ deposition and high-temperature N₂ annealing,”
Appl. Phys. Express, 13, 121002 (2020).

T. Iwata, Y. Nishi, and T. Kimoto,
“Grain-boundary structures and their impact on the electrical properties of NiO films deposited by reactive sputtering,”
Thin Solid Films, 709, 138203 (2020).

Review Article

T. Kimoto and H. Watanabe,
“Defect engineering in SiC technology for high-voltage power devices (Review)”
Appl. Phys. Express, 13, 120101 (2020).

International Presentations

Y. Yonezawa, K. Nakayama, H. Tsuchida, T. Kimoto, and H. Okumura,
“Bipolar Forward Degradation Phenomena and Countermeasures in SiC Power Device” (invited),
ECPE Workshop on Power Semiconductor Robustness – What Kills Power Devices? (Munich, Germany, 2020), SC-2.

T. Kimoto and M. Kaneko,
“Progress and future challenges of SiC power devices for energy efficiency” (plenary),
12th Int. Symp. on Advanced Plasma Sci. & Its Applications for Nitrides and Nanomaterials (Nagoya, Japan, 2020).

T. Maeda, T. Narita, S. Yamada, T. Kachi, T. Kimoto, M. Horita, and J. Suda,
“Study on Avalanche Breakdown in GaN -Determination of Impact Ionization Coefficients and Critical Electric Field-,”
International Symposium on Creation of Advanced Photonic and Electronic Devices 2020 (Kyoto, Japan, 2020), P-31.

K. Kanegae, M. Horita, T. Kimoto, and J. Suda,
“Photoionization Cross Section of the Carbon-related Hole Trap in n-type GaN,”
International Symposium on Creation of Advanced Photonic and Electronic Devices 2020 (Kyoto, Japan, 2020), P-32.

K. Tachiki and T. Kimoto,
“Investigation of Gate Oxide Reliabilities in N₂ Annealed SiC/SiO₂ Structure,”
International Symposium on Creation of Advanced Photonic and Electronic Devices 2020 (Kyoto, Japan, 2020), P-33.

K. Ito, T. Kobayashi, and T. Kimoto,
“Interface State Density Distribution Considering the Inversion Layer Quantization in SiC MOSFETs,”
International Symposium on Creation of Advanced Photonic and Electronic Devices 2020 (Kyoto, Japan, 2020), P-34.

T. Miyatani, Y. Nishi, and T. Kimoto,
“Gradual Resistive Switching Characteristics in Pt/TaO_x/Ta₂O₅/Pt Cells,”
International Symposium on Creation of Advanced Photonic and Electronic Devices 2020 (Kyoto, Japan, 2020), P-35.

M. Hara, S. Asada, T. Maeda, and T. Kimoto,
“Reverse Field Emission Current in Heavily-Doped SiC Schottky Barrier Diodes,”
International Symposium on Creation of Advanced Photonic and Electronic Devices 2020 (Kyoto, Japan, 2020), P-36.

T. Kimoto and M. Kaneko,
“Progress and Future Prospects of High-Voltage SiC Power Devices” (invited),
2020 Int. Symp. on VLSI Technology, Systems and Applications (Hsinchu, Taiwan, 2020), T2-1.

T. Kato, Y. Fukuoka, H. Kang, K. Hamada, A. Onogi, H. Fujiwara, T. Ito, T. Kimoto, F. Udrea,
“Enhanced Performance of 50 nm Ultra-Narrow-Body Silicon Carbide MOSFETs Based on FinFET Effect,”
IEEE 32nd Int. Symp. on Power Semicond. Devices & ICs (ISPSD 2020) (Vienna, Austria (virtual), 2020), C3L-A-1.

M. Hara, M. Kaneko, and T. Kimoto,
“Accurate Determination of Barrier Heights in Heavily-Doped SiC Schottky Barrier Diodes Fabricated with Various Metals,”
2020 Int. Conf. on Solid State Devices and Materials (Toyama, Japan (virtual), 2020), D-4-01.

R. Ishikawa, M. Hara, M. Kaneko, and T. Kimoto,
“High electron mobility along the c-axis in 4H-SiC,”
2020 Int. Conf. on Solid State Devices and Materials (Toyama, Japan (virtual), 2020), D-4-02.

Q. Jin, M. Nakajima, M. Kaneko, and T. Kimoto,
“Lateral spreads of Al and P atoms implanted into a high-purity semi-insulating SiC substrate,”
2020 Int. Conf. on Solid State Devices and Materials (Toyama, Japan (virtual), 2020), D-4-03.