2019

International Journals

T. Kobayashi, Y, Matsushita, T. Kimoto, and A. Oshiyama,
“Structural determination of phosphosilicate glass based on first-principles molecular dynamics calculation,”
Jpn. J. Appl. Phys., 58, 011001 (2019).

Y. Zhao, H. Niwa, and T. Kimoto,
“Impact ionization coefficients of 4H-SiC in a wide temperature range,”
Jpn. J. Appl. Phys., 58, 018001 (2019).

T. Kimoto,
“Updated trade-off relationship between specific on-resistance and breakdown voltage in 4H-SiC{0001} unipolar devices,”
Jpn. J. Appl. Phys., 58, 018002 (2019).

S. Nakazawa, H. A. Shih, N. Tsurumi, Y. Anda, T. Hatsuda, T. Ueda, T. Kimoto, and T. Hashizune,
“Effects of post-deposition annealing in O2 on threshold voltage of Al2O3/AlGaN/GaN MOS heterojunction field-effect transistors,”
Jpn. J. Appl. Phys., 58, 030902 (2019).

T. Kobayashi, K. Tachiki, K. Ito, and T. Kimoto,
“Reduction of interface state density in SiC (0001) MOS structures by low-oxygen-partial-pressure annealing,”
Appl. Phys. Express, 12, 031001 (2019).

T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, and J. Suda,
“Design and Fabrication of GaN p-n Junction Diodes with Negative Beveled-Mesa Termination,”
IEEE Electron Device Lett., 40, pp. 941-944 (2019).

T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, and J. Suda,
“Shockley-Read-Hall Lifetime in Homoepitaxial p-GaN Extracted from Recombination Current in GaN p-n+ Junction Diodes,”
Jpn. J. Appl. Phys., 58, SCCB14 (2019).

M. Nakajima, M. Kaneko and T. Kimoto,
“Normally-off 400 °C Operation of n- and p-JFETs With a Side-Gate Structure Fabricated by Ion Implantation Into a High-Purity Semi-Insulating SiC Substrate,”
IEEE Electron Device Lett., 40, pp. 866-869 (2019).

K. Ito, T. Kobayashi, and T. Kimoto,
“Influence of vacuum annealing on interface properties of SiC (0001) MOS structures,”
Jpn. J. Appl. Phys., 58, 078001 (2019).

K. Kanegae, H. Fujikura, Y. Otoki, T. Konno, T. Yoshida, M. Horita, T. Kimoto, and J. Suda,
“Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy,

Appl. Phys. Lett., 115, 012103 (2019).

T. Miyatani, Y. Nishi, and T. Kimoto,
“Dominant conduction mechanism in TaOx-based resistive switching devices,”
Jpn. J. Appl. Phys., 58, 090914 (2019).

T. Maeda, X. Chi, H. Tanaka, M. Horita, J. Suda and T. Kimoto,
“Franz-Keldysh effect in 4H-SiC p-n junction diode under high electric field along the <11-20> direction,”
Jpn. J. Appl. Phys., 58, 091007 (2019).

A. Iijima and T. Kimoto,
“Electronic energy model for single Shockley stacking fault formation in 4H-SiC crystals,”
J. Appl. Phys., 126, 105703 (2019).

S. Asada, J. Suda, and T. Kimoto,
“Demonstration of Conductivity Modulation in SiC Bipolar Junction Transistors with Reduced Base Spreading Resistance,”
IEEE Tran. on Electron Devices, 66, pp. 4870-4874 (2019).

Conference Proceedings

T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, and J. Suda,
“Estimation of Impact ionization Coefficient in GaN by Photomultiplication Measurements Utilizing Franz-Keldysh Effect,”
Proceedings of the 31st IEEE International Symposium on Power Semiconductor Devices&ICs (ISPSD), pp. 59-62 (2019).

T. Miyatani, Y. Nishi, and T. Kimoto,
“Two modes of bipolar resistive switching characteristics in asymmetric TaOx-based ReRAM cells,”
MRS Adv., 4, 48, 2601-2607 (2019).

M. Kaenko, U. Grossner, and T. Kimoto,
“SiC Vertical-Channel n- and p-JFETs Fully Fabricated by Ion Implantation,”
Mater. Sci. Forum, 963, 841-844 (2019).

International Presentations

T. Kimoto,
“Defect electronics in SiC for high-voltage power devices and future prospects” (plenary),
KIEEME-Silicon Carbide Conference (Busan, Korea, 2019), II-1.

T. Miyatani, Y. Nishi, and T. Kimoto,
“Impacts of an Asymmetric Stack Structure in TaOx-Based ReRAM Cells on Resistive Switching Characteristics,”
2019 Mater. Res. Soc. Sympo. Spring Meeting (Phoenix, USA, 2019), EP09.07.02.

Y. Nishi, M. Arahata, and T. Kimoto,
“Effects of Crystallinity and Oxygen Composition on Forming Characteristics in TMO-Based Resistive Switching Cells,”
2019 Mater. Res. Soc. Sympo. Spring Meeting (Phoenix, USA, 2019), EP09.07.05.

N. Kanegami, Y. Nishi, and T. Kimoto,
“Coexistence of Interface-Type and Filament-Type Resistive Switching Phenomena in Ti/Pr0.7Ca0.3MnO3/Pt Cells,”
2019 Mater. Res. Soc. Sympo. Spring Meeting (Phoenix, USA, 2019), EP09.08.01.

T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, and J. Suda,
“Estimation of Impact ionization Coefficient in GaN by Photomultiplication Measurements Utilizing Franz-Keldysh Effect,”
31st IEEE International Symposium on Power Semiconductor Devices&ICs (ISPSD2019), (Shanghai, China, 2019), B1L-A-1.

T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, and J. Suda,
“Estimation of Impact Ionization Coefficient in GaN and Its Temperature Dependence by Photomultiplication Measurements Utilizing Franz-Keldysh Effect,”
13th International Conference on Nitride Semiconductors (Bellevue, Washington, USA, 2019), B04.07.

K. Kanegae, T. Narita, K. Tomita, T. Kachi, M. Horita, T. Kimoto, and J. Suda,
“Determination Methods of H1 Trap Concentration in N-Type GaN Schottky Barriers via Sub-Bandgap-Light Isothermal Capacitance Transient Spectroscopy,”
13th International Conference on Nitride Semiconductors (Bellevue, Washington, USA, 2019), J01.03.

K. Kanegae, T. Narita, K. Tomita, T. Kachi, M. Horita, T. Kimoto, and J. Suda,
“Photon energy dependence of photoionization cross section ratio of electron to hole for the carbon-related hole trap in n-type GaN,”
30th International Conference on Defects in Semiconductors (Seattle, Washington, USA, 2019), Poster Session Ⅱ 2.

K. Kanegae, T. Narita, K. Tomita, T. Kachi, M. Horita, T. Kimoto, and J. Suda,
“Quick measurement method of carbon-related defect concentration in n-type GaN  by dual-color-sub-bandgap-light-excited isothermal capacitance transient spectroscopy,”
2019 Int. Conf. on Solid-State Devices and Materials (Nagoya, Japan, 2019), K-7-04.

T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, and J. Suda,
“High Avalanche Capability in GaN p-n Junction Diodes Realized by Shallow Beveled-Mesa Structure Combined with Lightly Mg-Doped p-Layers,”
The 51th International Conference on Solid State Devices and Materials (Nagoya, Japan, 2019), K-1-05.

T. Kimoto,
“SiC Power Devices: Overview, Defect Electronics, and Reliability” (invited),
2019 IEEE Int. Reliability Physics Symposium (Monterey, USA, 2019), TM2.1.

T. Kimoto,
“Growth and Defect Reduction of SiC for Low-Loss Power Devices” (plenary),
2nd Nucreation and Growth Research Conf. (Kyoto, Japan, 2019), OP-2.

T. Kimoto,
“Progress and Future Challenges of SiC Power Devices” (invited),
Cambridge Power Electronics Colloquium 2019 (Cambridge, UK, 2019).

T. Kimoto , T. Kobayashi, K. Tachiki, and K. Ito,
“Promise and Future Challenges of SiC Power MOSFETs” (invited),
Int. Conf. on Insulating Films on Semiconductors 2019 (Cambridge, UK, 2019), 5.1.

K. Tachiki and T. Kimoto,
“Reduction of Interface States in 4H-SiC/SiO2 near both Conduction and Valence Band Edges by High-temperature Nitrogen Annealing,”
Int. Conf. on Silicon Carbide and Related Materials 2019 (Kyoto, Japan, 2019), Mo-2A-05.

K. Ito, T. Kobayashi, and T. Kimoto,
“Interface State Density Distributions near The Conduction Band Edge Originating from The Conduction Band Fluctuation in SiO2/SiC Systems” (invited),
Int. Conf. on Silicon Carbide and Related Materials 2019 (Kyoto, Japan, 2019), Tu-3A-01.

M. Nakajima, Q. Jin, M. Kaneko, and T. Kimoto,
“Experimental Study on Short-Channel Effects in Side-Gate SiC JFETs,”
Int. Conf. on Silicon Carbide and Related Materials 2019 (Kyoto, Japan, 2019), Tu-P-50.

H. Tanaka and N. Mori,
“Monte Carlo Simulation of Hall Mobility in 4H-SiC MOS Inversion Layers,”
Int. Conf. on Silicon Carbide and Related Materials 2019 (Kyoto, Japan, 2019), We-2A-03.

D. Stefanakis, X. Chi, T. Maeda, M. Kaneko, and T. Kimoto,
“Temperature Dependence of Impact Ionization Coefficients in 4H-SiC along <11-20> Direction,”
Int. Conf. on Silicon Carbide and Related Materials 2019 (Kyoto, Japan, 2019), We-3A-01.

M. Hara, S. Asada, T. Maeda, and T. Kimoto,
“Forward Thermionic Field Emission Current and Barrier Height Lowering in Heavily-Doped 4H-SiC Schottky Barrier Diodes,”
Int. Conf. on Silicon Carbide and Related Materials 2019 (Kyoto, Japan, 2019), We-3A-02.

C. Koo, M. Kaneko, and T. Kimoto,
“Impacts of High-Temperature Annealing and Thermal Oxidation on Electrical Properties of High-Purity Semi-Insulating 4H-SiC Substrates Grown by HTCVD,”
Int. Conf. on Silicon Carbide and Related Materials 2019 (Kyoto, Japan, 2019), We-3B-03.

K. Kanegae, T. Okuda, M. Horita, J. Suda, and T. Kimoto,
“Depth Profiles of Deep Levels Generated by ICP-RIE in 4H-SiC,”
Int. Conf. on Silicon Carbide and Related Materials 2019 (Kyoto, Japan, 2019), We-3B-05.

T. Maeda, X. Chi, H. Tanaka, M. Horita, J. Suda, and T. Kimoto,
“Photocurrent induced by Franz-Keldysh effect in 4H-SiC p-n junction diodes under high electric field along <11-20> direction,”
Int. Conf. on Silicon Carbide and Related Materials 2019 (Kyoto, Japan, 2019), We-3B-07.

M. Kaneko, A. Tsibizov, T. Kimoto, and U. Grossner,
“Breakdown Characteristics of Lateral PIN Diodes Fully Fabricated by Ion Implantation into HTCVD-Grown High-Purity Semi-Insulating SiC Substrate,”
Int. Conf. on Silicon Carbide and Related Materials 2019 (Kyoto, Japan, 2019), Th-2A-04.

Y. Yonezawa, K. Nakayama, R. Kosugi, S. Harada, K. Kojima, T. Kato, H. Tsuchida, T. Kimoto, and H. Okumura,
“Next-Generation High- to Ultra-High-Voltage SiC Power Devices” (invited),
Int. Conf. on Silicon Carbide and Related Materials 2019 (Kyoto, Japan, 2019), Fr-2A-01.

S. Asada, M. Kaneko, J. Suda, and T. Kimoto,
“Enhancement of Conductivity Modulation in SiC Bipolar Junction Transistors by Decreasing Base Spreading Resistance,”
Int. Conf. on Silicon Carbide and Related Materials 2019 (Kyoto, Japan, 2019), Fr-2A-02.

C. Koo, M. Kaneko, and T. Kimoto,
“Resistivity of High-Purity Semi-Insulating 4H-SiC Substrates,”
9th Asia-Pacific Workshop on Widegap Semiconductors (Okinawa, Japan, 2019), MoP-CH-14.

H. Tanaka, N. Mori, and T. Kimoto,
“Theoretical Study of Band Structure Effects on Impact Ionization Coefficients in Wide-bandgap Semiconductors,”
9th Asia-Pacific Workshop on Widegap Semiconductors (Okinawa, Japan, 2019), TuP-CH-16.

M. Hara, S. Asada, T. Maeda, and T. Kimoto,
“Significant Image Force Lowering at Metal/Heavily-Doped SiC Interfaces,”
9th Asia-Pacific Workshop on Widegap Semiconductors (Okinawa, Japan, 2019), ED3-4.

M. Nakajima, Q. Jin, M. Kaneko, and T. Kimoto,
“Impacts of Channel Length on Electrical Characteristics in Side-Gate SiC JFETs,”
9th Asia-Pacific Workshop on Widegap Semiconductors (Okinawa, Japan, 2019), ED4-3.

K. Kanegae, T. Okuda, M. Horita, J. Suda, and T. Kimoto,
“Depth Profiles of Defects Generated by RIE in 4H-SiC Characterized by Deep-level Transient Spectroscopy,”
9th Asia-Pacific Workshop on Widegap Semiconductors (Okinawa, Japan, 2019), ED4-5.

K. Ito, T. Kobayashi, and T. Kimoto,
“Energy distributions of interface state density originating from tail states of the conduction band in SiC MOS structures,”
9th Asia-Pacific Workshop on Widegap Semiconductors (Okinawa, Japan, 2019), CH4-4.

K. Tachiki, K. Kanegae, and T. Kimoto,
“Impact of high-temperature nitrogen annealing on interface properties of p-type 4H-SiC/SiO2,”
9th Asia-Pacific Workshop on Widegap Semiconductors (Okinawa, Japan, 2019), ThP-CH-13.

D. Stefanakis, X. Chi, T. Maeda, M. Kaneko, and T. Kimoto,
“Impact Ionization Coefficients for 4H-SiC on a-face (11-20) and their Temperature Variations,”
9th Asia-Pacific Workshop on Widegap Semiconductors (Okinawa, Japan, 2019), ThP-ED-14.

T. Maeda, T. Narita, S. Yamada, T. Kachi, T. Kimoto, M. Horita, and J. Suda,
“Impact ionization coefficients in GaN measured by above- and sub-Eg illuminations for p-/n+ junction,”
2019 Int. Electron Devices Meeting (IEDM2019), (San Francisco, USA, 2019), 4.2.

T. Kimoto, X. Chi, Y. Zhao, H. Niwa, and M. Kaneko,
“Breakdown Phenomena in High- and Low-Voltage SiC Devices” (invited),
Materials Research Meeting 2019 (Yokohama, Japan, 2019), D4-11-107.