International Journals

H. Tanaka, J. Suda, and T. Kimoto, “Analysis of high-field hole transport in germanium and silicon nanowires based on Boltzmann’s transport equation”,
IEEE Trans. Nanotechnology, 16, 118-125 (2017).

H. Niwa, J. Suda, and T. Kimoto, “Ultrahigh-voltage SiC MPS diodes with hybrid unipolar/bipolar operation” (Invited Paper),
IEEE Trans. Electron Devices, 64, 874 (2017).

M. Kaneko, T. Kimoto, and J. Suda, “Phonon frequencies of a highly strained AlN layer coherently grown on 6H-SiC (0001)”,
AIP Advances, 7, 015105 (2017).

T. Maeda, M. Okada, M. Ueno, Y. Yamamoto, T. Kimoto, M. Horita, and J. Suda, “Temperature dependence of barrier height in Ni/n-GaN Schottky barrier diode”,
Appl. Phys. Express, 10, 051002 (2017).

T. Kobayashi, S. Nakazawa, T. Okuda, J. Suda, and T. Kimoto, “Interface properties of NO-annealed 4H-SiC (0001), (11-20), and (1-100) MOS structures with heavily-doped p-bodies”, J. Appl. Phys., 121, 145703 (2017).

T. Kobayashi, J. Suda, and T. Kimoto, “Reduction of interface state density in SiC (0001) MOS structures by post-oxidation Ar annealing at high temperature”, AIP Advances, 7, 045008 (2017).

S. Asada, T. Kimoto and J. Suda, “Design Criterion for SiC BJTs to Avoid ON-Characteristics Degradation Due to Base Spreading Resistance”, IEEE Trans. Electron Devices, 64, 2086-2091 (2017).

S. Asada, T. Kimoto and J. Suda, “Effect of Postoxidation Nitridation on Forward Current–Voltage Characteristics in 4H–SiC Mesa p-n Diodes Passivated With SiO₂“, IEEE Trans. Electron Devices, 64, 3016-3018 (2017).

Y. Tokuda, I. Kamata, N. Hoshino, T. Kato, H. Okumura, T. Kimoto, and H. Tsuchida, “Observation of double Shockley stacking fault expansion in heavily-nitrogen-doped 4H-SiC using PL technique”, J. Crystal Growth 468, 889-893 (2017).

Y. Nishi, H. Sasakura, and T. Kimoto,　”Appearance of quantum point contact in Pt/NiO/Pt resistive switching cells” (INVITED FEATURE PAPER),
J. Mater. Res., 32(14), 2631 (2017).

H. Fujihara, J. Suda, and T. Kimoto, “Electrical properties of n- and p-type 4H-SiC formed by ion implantation into high-purity semi-insulating substrates”, Jpn. J. Appl. Phys., 56(7), 070306 (2017).

M. Horita, S. Takashima, R. Tanaka, H. Matsuyama, K. Ueno, M. Edo, T. Takahashi, M. Shimizu, and J. Suda, “Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations”, Jpn. J. Appl. Phys., 56(3), 031001 (2017).

T. Kobayashi and T. Kimoto, “Carbon Ejection from a SiO₂/SiC(0001) Interface by Annealing in High-Purity Ar”, Appl. Phys. Lett., 111, 062101 (preprint: arXiv:1705.00814 [cond-mat.mtrl-sci]) (2017).

S. Asada, T. Kimoto, and Ivan G. Ivanov, “Calibration on wide-ranging aluminum doping concentrations by photoluminescence in high-quality uncompensated p-type 4H-SiC”, Appl. Phys. Lett., 111, 072101 (2017).

A. Iijima, I. Kamata, H. Tsuchida, J. Suda, and T. Kimoto, “Correlation between shapes of Shockley stacking faults and structures of basal plane dislocations in 4H-SiC epilayers”, Philos. Mag., 97, 2736-2752 (2017).

Conference Proceedings

T. Hosoi, S. Azumo, Y. Kashiwagi, S. Hosaka, K. Yamamoto, M. Aketa, H. Asahara, T. Nakamura, T. Kimoto, T. Shimura, and H. Watanabe, “Reliability-aware design of metal/high-k gate stack for high-performance SiC power MOSFET”, Proc. Int. Symp. on Power Semicond. Power Devices & ICs (Sapporo, Japan, 2017), 6-3.

H. Tanaka, J. Suda, and T. Kimoto, “Insight into phonon scattering in Si nanowires through high-field hole transport: Impacts of boundary condition and comparison with bulk phonon approximation”, Journal of Physics: Conf. Series 864, 012046 (2017).

H. Tanaka, J. Suda, and T. Kimoto, “Analysis of quasi-ballistic hole transport capability of Ge and Si nanowire pMOSFETs by a quantum-corrected Boltzmann transport equation”, Proceedings of SISPAD 2017, 227 (2017).

International Presentations

T. Kimoto, “Progress and future challenges of high-voltage SiC power devices” (invited),
Tech. Digest of 3rd Intensive Discussion on Growth of Nitride Semiconductors (Sendai, Japan, 2017), pp.61-69.

T. Kimoto, “Progress and future challenges of SiC power devices” (invited),
2017 SPIE Phtonics West (San Francisco, USA, 2017), 10104-39.

Takashima, K. Ueno, H. Matsuyama, M. Edo, T. Takahashi, M. Shimizu, M. Horita, J. Suda, and K. Nakagawa, “MOS channel properties on homoepitaxially-grown p-type GaN layers”,
3rd Intensive Discussion on Growth of Nitride Semiconductors (Sendai, Japan, 2017), Session V-3.

T. Kimoto, “Control of carrier lifetime and application to ultrahigh-voltage SiC bipolar devices” (invited),
2017 German-Japanese-Spanish Joint Workshop on Frontier Photonic and Electronic Materials and Devices (Mallorca, Spain, 2017), Tu-8.

T. Kimoto, A. Iijima, H. Tsuchida, T. Miyazawa, T. Tawara, A. Otsuki, T. Kato, and Y. Yonezawa, “Understanding and reduction of degradation phenomena in SiC power devices” (invited),
IEEE 2017 Int. Reliability Physics Symposium (Montery, USA, 2017), 2A.4.

T. Kimoto, “Progress and Future Challenges of SiC Material and Power Devices” (invited),
Compound Semiconductor Week 2017 (Berlin, Germany, 2017), A6.4.

M. Horita, T. Narita, T. Kachi, T. Uesugi, J. Suda, “Nitrogen displacement related deep level traps in homoepitaxial n-type GaN”,
12th International Conference on Nitride Semiconductors (Strasbourg, France, 2017), A11.4

T. Maeda, M. Okada, M. Ueno, Y. Yamamoto, T. Kimoto, M. Horita, J. Suda, “Temperature dependence of Schottky barrier height of Ni/n-GaN consistently obtained by C-V and forward I-V measurements”,
12th International Conference on Nitride Semiconductors (Strasbourg, France, 2017), C10.6

K. Kanegae, T. Kimoto, M. Horita, J. Suda, “Investigation of hole traps in n-type homoepitaxial GaN by ODLTS focusing on sub-bandgap-light optical excitation process”,
12th International Conference on Nitride Semiconductors (Strasbourg, France, 2017), C02.24

M. Kaneko, T. Kimoto, J. Suda, “Intentional introduction of misfit dislocations at AlN/SiC heterointerface”,
6th CIRFE Seminar (Nagoya, Japan, 2017).

H. Tanaka, J. Suda, and T. Kimoto, “Theoretical Analysis of Quasi-ballistic Hole Transport in Ge and Si Nanowires Focusing on Energy Relaxation Process”,
IEEE Silicon Nanoelectronics Workshop 2017 (Kyoto, Japan, 2017), 5-1.

H. Tanaka, J. Suda, and T. Kimoto, “Analysis of quasi-ballistic hole transport capability of Ge and Si nanowire pMOSFETs by a quantum-corrected Boltzmann transport equation”,
2017 International Conference on Simulation of Semiconductor Processes and Devices (Kamakura, Japan, 2017), 10-2.

M. Kaneko and T. Kimoto, “400°C operation of SiC n- and p-channel JFETs fabricated by ion implantation into a high-purity semi-insulating substrate”,
Int. Conf. on Silicon Carbide and Related Materials 2017 (Washington, D.C., USA, 2017), WE.E1.4.

T. Kobayashi and T. Kimoto, “Observation of Oxidation-Induced Carbon-Rich Region in the Near-Interface SiC by High-Resolution STEM-EDX”,
Int. Conf. on Silicon Carbide and Related Materials 2017 (Washington, D.C., USA, 2017), MO.BP.13.

T. Kobayashi, Y. Matsushita, T. Okuda, A. Oshiyama and T. Kimoto, “Evidence of Carbon-Related Defects at the SiC MOS Interface and Mechanism of Defect Passivation by Nitridation and Phosphorus Treatment – Chemical Analyses Combined with DFT Calculations”,
Int. Conf. on Silicon Carbide and Related Materials 2017 (Washington, D.C., USA, 2017), TU.B3.1.

S. Asada, J. Suda, and T. Kimoto, “Effects of parasitic region in SiC bipolar junction transistors on forced current gain”,
Int. Conf. on Silicon Carbide and Related Materials 2017 (Washington DC, USA, 2017), WE.DP.8.

S. Asada, T. Kimoto, and I. G. Ivanov, “Aluminum doping concentration calibration by photoluminescence in high-quality uncompensated p-type 4H-SiC”,
Int. Conf. on Silicon Carbide and Related Materials 2017 (Washington DC, USA, 2017), MO.B2.5.

A. Iijima, J.Suda, and T. Kimoto, “Electrostatic-energy model for single Shockley stacking fault formation in 4H-SiC crystals” (invited),
Int. Conf. on Silicon Carbide and Related Materials 2017 (Washington, D.C., USA, 2017), MO.BIP.1, TU.BIP.1, WE.BIP.1, TH.BIP.1.

T. Enokizono, T. Kimoto and J. Suda, “Fabrication of full-SiC comb-drive resonators by conduction-type-selective electrochemical etching”,
Int. Conf. on Silicon Carbide and Related Materials 2017 (Washington, D.C., USA, 2017), MO.EP.5.

K. Tachiki, T. Ono, T. Kobayashi and T. Kimoto, “Experimental Study on Short Channel Effects in 4H-SiC MOSFETs”,
Int. Conf. on Silicon Carbide and Related Materials 2017 (Washington, D.C., USA, 2017), TU.DP.16.

X. Chi, H. Niwa, Y. Nishi, T. Kimoto, “Breakdown characteristics of 4H-SiC p-n junction diodes with a wide range of doping concentration”,
Int. Conf. on Silicon Carbide and Related Materials 2017 (Washington, D.C., USA, 2017), TH.D1.7.

S. Asada, J. Suda, and T. Kimoto, “Design criterion to avoid on-characteristics deterioration due to base spreading resistance in SiC bipolar junction transistors”,
Asia-Pacific Workshop on Widegap Semiconductors 2017 (Qingdao, China, 2017), TUSCO 9.

T. Kobayashi, Y. Matsushita, T. Kimoto, and A. Oshiyama, “Microscopic Mechanism of the Removal of Carbon-Associated Defects at a SiO₂/SiC Interface due to Phosphorus Treatment”, CPMD 2017 Workshop (Ibaraki, Japan, 2017), 33.