2019

International Journals

T. Kobayashi, Y, Matsushita, T. Kimoto, and A. Oshiyama, “Structural determination of phosphosilicate glass based on first-principles molecular dynamics calculation”,
Jpn. J. Appl. Phys., 58, 011001 (2019).

Y. Zhao, H. Niwa, and T. Kimoto, “Impact ionization coefficients of 4H-SiC in a wide temperature range”,
Jpn. J. Appl. Phys., 58, 018001 (2019).

T. Kimoto, “Updated trade-off relationship between specific on-resistance and breakdown voltage in 4H-SiC{0001} unipolar devices”,
Jpn. J. Appl. Phys., 58, 018002 (2019).

S. Nakazawa, H. A. Shih, N. Tsurumi, Y. Anda, T. Hatsuda, T. Ueda, T. Kimoto, and T. Hashizune, “Effects of post-deposition annealing in O2 on threshold voltage of Al2O3/AlGaN/GaN MOS heterojunction field-effect transistors”,
Jpn. J. Appl. Phys., 58, 030902 (2019).

T. Kobayashi, K. Tachiki, K. Ito, and T. Kimoto, “Reduction of interface state density in SiC (0001) MOS structures by low-oxygen-partial-pressure annealing”,
Appl. Phys. Express, 12, 031001 (2019).

T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, and J. Suda, “Design and Fabrication of GaN p-n Junction Diodes with Negative Beveled-Mesa Termination”,
IEEE Electron Device Lett., 40, 6 (2019).

T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, and J. Suda, “Shockley-Read-Hall Lifetime in Homoepitaxial p-GaN Extracted from Recombination Current in GaN p-n+ Junction Diodes”,
Jpn. J. Appl. Phys., 58, SCCB14 (2019).

M. Nakajima, M. Kaneko and T. Kimoto, “Normally-off 400 °C Operation of n- and p-JFETs With a Side-Gate Structure Fabricated by Ion Implantation Into a High-Purity Semi-Insulating SiC Substrate,” IEEE Electron Device Lett., 40, 6 (2019).

K. Ito, T. Kobayashi, and T. Kimoto, “Influence of vacuum annealing on interface properties of SiC (0001) MOS structures,” Jpn. J. Appl. Phys., 58, 078001 (2019).

K. Kanegae, H. Fujikura, Y. Otoki, T. Konno, T. Yoshida, M. Horita, T. Kimoto, and J. Suda, “Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy,” Appl. Phys. Lett., 115, 012103 (2019).

Conference Proceedings

T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, and J. Suda, “Estimation of Impact ionization Coefficient in GaN by Photomultiplication Measurements Utilizing Franz-Keldysh Effect”,
Proceedings of the 31st IEEE International Symposium on Power Semiconductor Devices&ICs (ISPSD), pp. 59-62 (2019).

International Presentations

T. Kimoto, “Defect electronics in SiC for high-voltage power devices and future prospects” (plenary),
KIEEME-Silicon Carbide Conference (Busan, 2019), II-1.

T. Miyatani, Y. Nishi, and T. Kimoto, “Impacts of an Asymmetric Stack Structure in TaOx-Based ReRAM Cells on Resistive Switching Characteristics”,
2019 Mater. Res. Soc. Sympo. Spring Meeting (Phoenix, USA, 2019), EP09.07.02.

Y. Nishi, M. Arahata, and T. Kimoto, “Effects of Crystallinity and Oxygen Composition on Forming Characteristics in TMO-Based Resistive Switching Cells”,
2019 Mater. Res. Soc. Sympo. Spring Meeting (Phoenix, USA, 2019), EP09.07.05.

N. Kanegami, Y. Nishi, and T. Kimoto, “Coexistence of Interface-Type and Filament-Type Resistive Switching Phenomena in Ti/Pr0.7Ca0.3MnO3/Pt Cells”,
2019 Mater. Res. Soc. Sympo. Spring Meeting (Phoenix, USA, 2019), EP09.08.01.

T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, and J. Suda, “Estimation of Impact ionization Coefficient in GaN by Photomultiplication Measurements Utilizing Franz-Keldysh Effect”, 31st
IEEE International Symposium on Power Semiconductor Devices&ICs (ISPSD2019), (Shanghai, China, 2019), B1L-A-1.

T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, and J. Suda, “Estimation of Impact Ionization Coefficient in GaN and Its Temperature Dependence by Photomultiplication Measurements Utilizing Franz-Keldysh Effect”,
13th International Conference on Nitride Semiconductors (Bellevue, Washington, USA, 2019), B04.07.

K. Kanegae, T. Narita, K. Tomita, T. Kachi, M. Horita, T. Kimoto, and J. Suda, “Determination Methods of H1 Trap Concentration in N-Type GaN Schottky Barriers via Sub-Bandgap-Light Isothermal Capacitance Transient Spectroscopy”,
13th International Conference on Nitride Semiconductors (Bellevue, Washington, USA, 2019), J01.03.

K. Kanegae, T. Narita, K. Tomita, T. Kachi, M. Horita, T. Kimoto, and J. Suda, “Photon energy dependence of photoionization cross section ratio of electron to hole for the carbon-related hole trap in n-type GaN”,
30th International Conference on Defects in Semiconductors (Seattle, Washington, USA, 2019), Poster Session Ⅱ 2.