2019

International Journals

T. Kobayashi, Y, Matsushita, T. Kimoto, and A. Oshiyama, “Structural determination of phosphosilicate glass based on first-principles molecular dynamics calculation”, Jpn. J. Appl. Phys., 58, 011001 (2019).

Y. Zhao, H. Niwa, and T. Kimoto, “Impact ionization coefficients of 4H-SiC in a wide temperature range”, Jpn. J. Appl. Phys., 58, 018001 (2019).

T. Kimoto, “Updated trade-off relationship between specific on-resistance and breakdown voltage in 4H-SiC{0001} unipolar devices”, Jpn. J. Appl. Phys., 58, 018002 (2019).

S. Nakazawa, H. A. Shih, N. Tsurumi, Y. Anda, T. Hatsuda, T. Ueda, T. Kimoto, and T. Hashizune, “Effects of post-deposition annealing in O2 on threshold voltage of Al2O3/AlGaN/GaN MOS heterojunction field-effect transistors”, Jpn. J. Appl. Phys., 58, 030902 (2019).

T. Kobayashi, K. Tachiki, K. Ito, and T. Kimoto, “Reduction of interface state density in SiC (0001) MOS structures by low-oxygen-partial-pressure annealing”, Appl. Phys. Express, 12, 031001 (2019).

International Presentations

T. Kimoto, “Defect electronics in SiC for high-voltage power devices and future prospects” (plenary),
KIEEME-Silicon Carbide Conference (Busan, 2019), II-1.

International Presentations

T. Miyatani, Y. Nishi, and T. Kimoto, “Impacts of an Asymmetric Stack Structure in TaOx-Based ReRAM Cells on Resistive Switching Characteristics”,
2019 Mater. Res. Soc. Sympo. Spring Meeting (Phoenix, USA, 2019), EP09.07.02.

Y. Nishi, M. Arahata, and T. Kimoto, “Effects of Crystallinity and Oxygen Composition on Forming Characteristics in TMO-Based Resistive Switching Cells”,
2019 Mater. Res. Soc. Sympo. Spring Meeting (Phoenix, USA, 2019), EP09.07.05.

N. Kanegami, Y. Nishi, and T. Kimoto, “Coexistence of Interface-Type and Filament-Type Resistive Switching Phenomena in Ti/Pr0.7Ca0.3MnO3/Pt Cells”,
2019 Mater. Res. Soc. Sympo. Spring Meeting (Phoenix, USA, 2019), EP09.08.01.