International Journals

K. Ito, H. Tanaka, M. Horita, J. Suda, and T. Kimoto,
“Free electron mobility limited by fixed charges and trapped electrons in 4H-SiC(1120) and (1100) MOSFETs annealed in NO,“
Jpn. J. Appl. Phys. 64, 010902 (2025).

K. Mikami, M. Kaneko, and T. Kimoto,
“Doping-dependent fixed charges in SiC/SiO₂ structure,”
Appl. Phys. Express 18, 034002 (2025).

M. Hara, H. Tanaka, M. Kaneko, and T. Kimoto, 
“Analysis of trap-assisted tunneling current at non-alloyed contacts formed on heavily ion-implanted n-type SiC,” 
J. Appl. Phys. 137, 135704 (2025).

N. Maeda, M. Kaneko, H. Tanaka, and T. Kimoto,
“First-order SPICE modeling of SiC p- and n-channel side-gate JFETs toward high-temperature complementary JFET ICs,”
APL Electronic Devices 1, 026110 (2025).

M. Hara, T. Nabatame, Y. Irokawa, T. Sawada, M. Miyamoto, H. Miura, T. Kimoto, and Y. Koide,
“A three-step surface treatment and its impacts on electrical properties of c– and m-face GaN/Al₂O₃ MOS structures,”
Materials Science in Semiconductor Processing 196, 109606 (2025).

K. Mikami, M. Kaneko, and T. Kimoto,
“Small surface potential fluctuation near the valence band edge at nitrided 4H-SiC(0001)/SiO₂ interfaces,”
Appl. Phys. Lett. 126, 221603 (2025).

Review Article

Conference Proceedings

T. Kimoto, R. Ishikawa, K. Tachiki, X. Chi, K. Mikami, and M. Kaneko,
“Fundamentals and Future Challenges of SiC Power Devices,”
Proc. of 9th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2025 (Hong Kong, 2025), M-6-1-1.

T. Yoshida, K. Eikyu, K. Maekawa, H. Aono, and T. Kimoto,
“The Accurate AC BTI Prediction of SiC Power MOSFETs by Comprehensive Understanding of Physical Mechanism of Basic Vth Instability Phenomena,”
Proc. IEEE the 37th Int. Symp. on Power Semiconductor Devices and ICs (Kumamoto, 2025), SiC-3-5.

International Presentations

T. Kimoto, R. Ishikawa, K. Tachiki, X. Chi, K. Mikami, and M. Kaneko,
“Fundamentals and Future Challenges of SiC Power Devices” (invited),
9th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2025 (Hong Kong, 2025), M-6-1-1.

T. Kimoto, R. Ishikawa, K. Tachiki, X. Chi, K. Mikami, H. Tanaka, and M. Kaneko,
“Materials Science and Device Physics in SiC Electronics,”
International Symposium on Creation of Advanced Photonic and Electronic Devices 2025 (Kyoto, 2025), 1-2.

M. Kaneko, K. Tachiki, K. Mikami, H. Fujii, and T. Kimoto,
“Mobility improvement in SiC n- and p-channel MOSFETs,”
Japan-UK Joint Opportunity in Semiconductor Research (Southampton, 2025).

K. Mikami, M. Kaneko, and T. Kimoto,
“Fixed charges dependent on doping concentration in SiC/SiO₂ structures,”
Japan-UK Joint Opportunity in Semiconductor Research (Southampton, 2025).

F. Udrea and T. Kimoto,
“UP-SiC: Unlocking the Future Potential of Silicon Carbide in Power Electronics,”
Workshop on Japan and UK Joint Opportunity in Semiconductor Research
(Southampton, 2025).

X. Chi, K. Ito, T. Suto, A. Shima, M. Kaneko, and T. Kimoto,
“Unique electron trapping and its impacts on electron mobility in SiC n-channel MOSFETs,”
25th Mini-Conference on Modeling and Process Advancements for Enhanced Performance of Power MOSFETs, VCSEL and THz Communication Transistors (Virtual, 2025).

K. Mikami, M. Kaneko, and T. Kimoto,
“Fundamental study for precise control of threshold voltage in SiC MOSFETs,”
25th Mini-Conference on Modeling and Process Advancements for Enhanced Performance of Power MOSFETs, VCSEL and THz Communication Transistors (Virtual, 2025).

T. Kimoto,
“Materials Science and Device Physics in SiC Power Devices” (invited),
2025 YASC Workshop on SiC Power Devices (Online, 2025), #3.

T. Yoshida, K. Eikyu, K. Maekawa, H. Aono, and T. Kimoto,
“The Accurate AC BTI Prediction of SiC Power MOSFETs by Comprehensive Understanding of Physical Mechanism of Basic Vth Instability Phenomena,”
The 37th Int. Symp. on Power Semiconductor Devices and ICs (Kumamoto,2025), SiC-3-5.

T. Kimoto,
“Progress and Future Challenges of Si and Wide Bandgap Semiconductor Power FETs” (invited),
Special Workshop of VLSI Symposium on Centennial Anniversary of FET Invention: Past, Present, and Future (Kyoto, 2025), 7.

T. Kimoto,
“A New Era of SiC Power Devices and Their Impacts on Carbon Neutrality” (Plenary),
10th Int. Symposium on Organic and Inorganic Electronic Materials and Related Technologies (Fukui, 2025), Plenary-1.

M. Kaneko, H. Takashima, K. Shimazaki, S. Takeuchi, and T. Kimoto,
“Effect of oxidation ambient on the density of single photon sources formed at SiO2 /SiC interface” (invited),
Workshop on Material, Photonics, and Quantum Technology 2025 (Hokkaido, Japan, 2025), 11:00-11:25.

M. Kaneko, T. Matsuoka, S. Shibata, K. Mikami, and T. Kimoto,
“Performance Improvement of SiC Complementary JFETs for High-Temperature Integrated Circuits” (invited),
2025 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2025) (Nara, Japan, 2025), I-1.