International Journals

K. Ito, H. Tanaka, M. Horita, J. Suda, and T. Kimoto,
“Free electron mobility limited by fixed charges and trapped electrons in 4H-SiC(1120) and (1100) MOSFETs annealed in NO,“
Jpn. J. Appl. Phys. 64, 010902 (2025).

K. Mikami, M. Kaneko, and T. Kimoto,
“Doping-dependent fixed charges in SiC/SiO₂ structure,”
Appl. Phys. Express 18, 034002 (2025).

M. Hara, H. Tanaka, M. Kaneko, and T. Kimoto, 
“Analysis of trap-assisted tunneling current at non-alloyed contacts formed on heavily ion-implanted n-type SiC,” 
J. Appl. Phys. 137, 135704 (2025).

Review Article

Conference Proceedings

T. Kimoto, R. Ishikawa, K. Tachiki, X. Chi, K. Mikami, and M. Kaneko,
“Fundamentals and Future Challenges of SiC Power Devices,”
Proc. of 9th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2025 (Hong Kong, 2025), M-6-1-1.

International Presentations

T. Kimoto, R. Ishikawa, K. Tachiki, X. Chi, K. Mikami, and M. Kaneko,
“Fundamentals and Future Challenges of SiC Power Devices” (invited),
9th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2025 (Hong Kong, 2025), M-6-1-1.

T. Kimoto, R. Ishikawa, K. Tachiki, X. Chi, K. Mikami, H. Tanaka, and M. Kaneko,
“Materials Science and Device Physics in SiC Electronics,”
International Symposium on Creation of Advanced Photonic and Electronic Devices 2025 (Kyoto, 2025), 1-2.