International Journals

A. Koizumi, V.P. Markevich, N. Iwamoto, S. Sasaki, T. Ohshima, K. Kojima, T. Kimoto, K. Uchida, S. Nozaki, B. Hamilton, and A.R. Peaker, “E₁/E₂ traps in 6H-SiC studied with Laplace deep level transient spectroscopy”,
Appl. Phys. Lett. 102, 032104/1-4 (2013).

K. Kawahara, J. Suda, and T. Kimoto, “Deep levels generated by thermal oxidation in p-type 4H-SiC”,
J. Appl. Phys. 113, 033705/1-9 (2013).

T. Okuda, H. Miyake, T. Kimoto, and J. Suda, “Long photoconductivity decay characteristics in p-type 4H-SiC bulk crystals”,
Jpn. J. Appl. Phys., 52, 010202/1-3 (2013).

G. Alfieri and T. Kimoto, “Resolving the EH_6/7 level in 4H-SiC by Laplace-transform deep level transient spectroscopy”,
Appl. Phys. Lett., 102, 152108/1-4 (2013).

K. Kawahara, X. T. Trinh, N. T. Son, E. Janzen, J. Suda, and T. Kimoto, “Investigation on origin of Z_1/2 center in SiC by deep level transient spectroscopy and electron paramagnetic resonance”,
Appl. Phys. Lett., 102, 112106/1-4 (2013).

T. Iwata, Y. Nishi, and T. Kimoto, “Microscopic investigation of the electrical and structural properties of conductive filaments formed in Pt/NiO/Pt resistive switching cells”,
Jpn. J. Appl. Phys., 52, 041801/1-6 (2013).

K. Kawahara, J. Suda, and T. Kimoto, “Deep levels generated by thermal oxidation in n-type 4H-SiC”,
Appl. Phys. Exp., 6, 051301/1-4 (2013).

M. Kaneko, H. Okumura, R. Ishii, M. Funato, Y. Kawakami, T. Kimoto, and J. Suda, “Optical properties of highly strained AlN coherently grown on 6H-SiC (0001)”,
Appl. Phys. Exp., 6, 062604/1-4 (2013).

N. Kaji, H. Niwa, J. Suda, and T. Kimoto, “Ultrahigh-voltage SiC PiN diodes with an improved junction termination extension structure and enhanced carrier lifetime”,
Jpn. J. Appl. Phys., 52, 070204/1-4 (2013).

K. Adachi, N. Watanabe, H. Okamoto, H. Yamaguchi, T. Kimoto, and J. Suda, “Single-crystalline 4H-SiC micro cantilevers with a high quality factor”,
Sensors and Actuators A 197, 122-125 (2013).

M. Kaneko, R. Kikuchi, H. Okumura, T. Kimoto, and J. Suda, “Coherent growth of AlN/GaN short-period superlattice with average GaN mole fraction of up to 20% on 6H-SiC(0001) substrates by plasma-assisted molecular beam epitaxy”,
Jpn. J. Appl. Phys., 52, 08JE21/1-4 (2013).

M. Yoshikawa, K. Inoue, H. Seki, Y. Nanen, M. Kato, and T, Kimoto, “Characterization of silicon dioxide films on 4H-SiC(0001) Si, (1-100) M, and (11-20) A faces by cathodoluminescence spectroscopy”,
Appl. Phys. Lett., 102, 051612/1-4 (2013).

H. Miyake, T. Kimoto, and J. Suda, “AlGaN/SiC heterojunction bipolar transistors featuring AlN/GaN short-period superlattice emitter”,
IEEE Trans. Electron Devices, 60, 2768-2775 (2013).

M. Aoki, H. Kawanowa, G. Feng, and T. Kimoto, “Characterization of bar-shaped stacking faults in 4H-SiC epitaxial layers by high-resolution transmission electron microscopy”,
Jpn. J. Appl. Phys., 52, 061301/1-4 (2013).

D. Hirano, T. Kimoto, and Y. Kanemitu, “Determination of phase diagram of electron-hole systems in 4H-SiC”,
J. Phys. Society of Japan, 82, 063703/1-4 (2013).

M. Yoshikawa, H. Seki, T. Yamane, Y. Nanen, M. Kato, and T. Kimoto, “Abnormal behavior of longitudinal optical phonon in silicon dioxide films on 4H-SiC bulk epitaxial substrate using Fourier transform infrared (FT-IR) spectroscopy”,
Appl. Spectroscopy, 67, 542-545 (2013).

G. Alfieri and T. Kimoto, “First-principles study of Cl diffusion in cubic SiC”,
J. Appl. Phys., 113, 133706/1-4 (2013).

S. Mori, N. Morioka, J. Suda, and T. Kimoto, “Orientation and shape effects on ballistic transport properties in gate-all-around rectangular germanium nanowire nFETs”,
IEEE Trans. Electron Devices, 60, 944-950 (2013).

Y. Nanen, M. Kato, J. Suda, and T. Kimoto, “Effects of nitridation on 4H-SiC MOSFETs fabricated on various crystal faces”,
IEEE Trans. Electron Devices, 60, 1260-1262 (2013).

T. Okuda, T. Kimoto, and J. Suda, “Improvement of carrier lifetimes in highly Al-doped p-type 4H-SiC epitaxial layers by hydrogen passivation”,
Appl. Phys. Express, 6, 121301/1-3 (2013).

H. Miyake, K. Amari, and T. Kimoto, “Growth, electrical characterization, and electroluminescence of GaN/SiC heterojunction diodes and bipolar transistors fabricated on SiC off-axis substrates”,
Jpn. J. Appl. Phys., 52, 124102/1-9 (2013).

X. T. Trinh, K. Szász, T. Hornos, K. Kawahara, J. Suda, T. Kimoto, A. Gali, E. Janzén, and N.T. Son, “Negative-U carbon vacancy in 4H-SiC: Assessment of charge correction schemes and identification of the negative carbon vacancy at the quasicubic site”,
Phys. Rev. B, 88, 235209/1-13 (2013).

Conference Proceedings

J. Weber, S. Beljakowa, H. B. Weber, G. Pensl, B. Zippelius, T. Kimoto, and M. Krieger, “Determination of the electrical capture process of the EH6-center in n-type 4H-SiC”,
Mater. Sci. Forum, 740-742, 377-380 (2013).

G. Alfieri, and T Kimoto, “Diffusion study of chlorine in SiC by first principles calculations”,
Mater. Sci. Forum, 740-742, 381-384 (2013).

T. Okuda, H. Miyake, T. Kimoto, and J. Suda, “Persistent photoconductivity in p-type 4H-SiC bulk crystals”,
Mater. Sci. Forum, 740-742, 413-416 (2013).

G. Alfieri and T. Kimoto, “Laplace transform deep level transient spectroscopy study of the EH_6/7 center”,
Mater. Sci. Forum, 740-742, 645-648 (2013).

T. Kimoto, “Ultrahigh-voltage SiC devices for future power infrastructure” (plenary),
Proc. of 43th Europ. Solid-State Device Research Conf., (Bucharest, 2013), A4L-E, pp.22-29.

T. Kimoto, H. Yoshioka, and T. Nakamura, “Physics of SiC MOS interface and development of trench MOSFETs” (invited)”,
Proc. of 1st IEEE Workshop on Wide Bandgap Power Devices and Applications (Columbus, 2013), S10.1/1-4.

A. Castellazzi, T. Funaki, T. Kimoto, and T. Hikihara, “Short-circuit tests on SiC power MOSFETs”,
Proc. of IEEE 10th Int. Conf. on Power Electronics and Drive Systems (Kitakyusyu, 2013), pp. 1297-1300.

Y. Yonezawa, T. Mizushima, K. Takenaka, H. Fujisawa, T. Kato, S. Harada, Y. Tanaka, M. Okamoto, M. Sometani, D. Okamoto, N. Kumagai, S. Matsunaga, T. Deguchi, M. Arai, T. Hatakeyama, Y. Makifuchi, T. Araoka, N. Oose, T. Tsutsumi, M. Yoshikawa, K. Tatera, M. Harashima, Y. Sano, E. Morisaki, M. Takei, M. Miyajima, H. Kimura, A. Otsuki,  K. Fukuda, H. Okumura, and T. Kimoto, “Low V_f and highly reliable 16 kV ultrahigh voltage SiC flip-type n-channel implantation and epitaxial IGBT”,
Tech. Digest of 2013 Int. Electron Device Meeting (Washington DC, 2013), 6.6.

International Presentations

Y. Nishi, T. Iwata, and T. Kimoto, “Weibull distributions of forming characteristics in Pt/NiO/Pt stack structures for resistive random access memory”,
2013 Spring Meeting Mater. Res. Soc. (San Francisco, USA, 2013), DD11.04.

T. Iwata, Y. Nishi, and T. Kimoto, “Impact of the oxygen amount of an oxide layer and post annealing on forming voltage and initial resistance of NiO-based resistive switching cells”,
2013 Spring Meeting Mater. Res. Soc. (San Francisco, USA, 2013), DD14.11.

T. Kimoto, K. Kawahara, H. Niwa, T. Okuda, and J. Suda, “Junction technology in SiC for high-voltage power devices” (plenary),
IEEE 13th Int. Workshop on Junction Technology (Kyoto, Japan, 2013), p.54-57.

T. Kimoto, C. Kawahara, S. Ichikawa, Y. Nishi, and J. Suda, “Carrier recombination in SiC epilayers and substrates – impacts of point and extended defects”,
27th Int. Conf. on Defects in Semiconductors (Bologna, Italy, 2013), Tu-2-3.

T. Kimoto, K. Kawahara, J. Suda, X. T. Trinh, N.T. Son, and E. Janzen, “Origin of the carrier lifetime killer in SiC”,
27th Int. Conf. on Defects in Semiconductors (Bologna, Italy, 2013), ICDS.223.

T. Kimoto, “Ultrahigh-voltage SiC devices for future power infrastructure” (plenary),
43th Europ. Solid-State Device Research Conf., (Bucharest, Romania, 2013), A4L-E, pp.22-29.

M. Kaneko, H. Okumura, R. Ishii, M. Funato, Y. Kawakami, T. Kimoto, and J. Suda. “Large shifts of free excitonic transition energies and phonon frequency of AlN coherently-grown on 6H-SiC (0001) due to strong in-plane compressive strain”,
10th Int. Conf. on Nitride Semiconductors 2013 (Washington D.C., USA, 2013), CP3.17.

M. Kaneko, H. Okumura, R. Ishii, M. Funato, Y. Kawakami, T. Kimoto, and J. Suda. “Free exciton transition energies of AlN heteroepitaxially-grown on SiC”,
10th Topical Workshop on Heterostructure Microelectronics (Hokkaido, Japan, 2013), 3-6.

M. Kaneko, H. Okumura, R. Ishii, M. Funato, Y. Kawakami, T. Kimoto, and J. Suda. “Structural and optical characterization of 2H-AlN coherently-grown on 6H-SiC (0001) by plasma-assisted molecular beam epitaxy”,
2013 Jpn. Soc. Appl. Phys. – Mater. Res. Soc. Joint Symposia (Kyoto, Japan, 2013), 18a-M6-4.

T. Kimoto, “Fundamentals and frontiers of SiC power device technology” (invited lecture),
Short Course of 25th Int. Symp. of Power Semiconductor Devices & ICs (Kanazawa, Japan, 2013), p.115.

N. Morioka, J. Suda, and T. Kimoto, “Anisotropy in surface self-diffusion on Si nanowires and its impact on wire instability in hydrogen annealing”,
2013 Silicon Nanoelectronics Workshop (Kyoto, Japan, 2013), 6-3, p.91.

J. Suda, J. Youn, T. Kimoto, K. Kurihara, and S. Nagao, “Extraction of current-voltage characteristics of m-plane p-type GaN contacts by using transmission line method patterns”,

55th Electronic Materials Conf. (Notre Dame, USA, 2013), I9.

N. Morioka, J. Suda, and T. Kimoto, “Surface smoothing process of Si nanowires with various orientations by hydrogen anneal under different pressures”,
55th Electronic Materials Conf. (Notre Dame, USA, 2013), Z2.

N. Morioka, H. Tanaka, S. Mori, J. Suda, and T. Kimoto, “Impact of size and geometry on bandstructure of rectangular-shaped Si and Ge nanowires” (invited),
2013 EMN East Meeting (Beijing, China, 2013), B2-28, p.163.

T. Kimoto, “Frontiers and future challenges of SiC power devices” (invited lecture),
TIA Power Electronics Summer School 2013 (Tsukuba, Japan, 2013), III-3.

T. Okuda, T. Kimoto, and J. Suda, “Carrier lifetime improvement in Al-doped p-type 4H-SiC epitaxial layers by hydrogen passivation”,
Int. Conf. on Silicon Carbide and Related Materials 2013 (Miyazaki, Japan, 2013), Mo-1B-5, p.15.

T. Shirai, K. Danno, A. Seki, H. Sakamoto, T. Bessho, and T. Kimoto, “Solution growth of n-type 4H-SiC bulk crystals with low resistivity”,
Int. Conf. on Silicon Carbide and Related Materials 2013 (Miyazaki, Japan, 2013), Mo-P-2, p.25.

X. T. Trinh, K. Szász, T. Hornos, K. Kawahara, J. Suda, T. Kimoto, A. Gali, E. Janzén, and N. T. Son, “Identification of the negative carbon vacancy at quasi-cubic site in 4H-SiC by EPR and theoretical calculations”,
Int. Conf. on Silicon Carbide and Related Materials 2013 (Miyazaki, Japan, 2013), Mo-P-24, p.46.

N. Kaji, H. Niwa, J. Suda, and T. Kimoto, “Ultrahigh-voltage (> 20 kV) SiC PiN diodes with a space-modulated JTE and lifetime enhancement process via thermal oxidation”,
Int. Conf. on Silicon Carbide and Related Materials 2013 (Miyazaki, Japan, 2013), Tu-1A-2, p.86.

H. Yoshioka, T. Nakamura, J. Senzaki, A. Shimozato, Y. Tanaka, H. Okumura, and T. Kimoto, “Accurate characterization of interface state density of SiC MOS structures and the impacts on channel mobility” (invited),
Int. Conf. on Silicon Carbide and Related Materials 2013 (Miyazaki, Japan, 2013), We-3A-1, p.196.

T. Hatakeyama, M. Sometani, K. Fukuda, H. Okumura, and T. Kimoto, “Deep-level transient spectroscopy characterization of mobility-limiting interface states in SiO₂/4H-SiC structures”,
Int. Conf. on Silicon Carbide and Related Materials 2013 (Miyazaki, Japan, 2013), We-3A-2, p.197.

Y. Nanen, J. Suda, and T. Kimoto, “Designing of quasi-modulated region in 4H-SiC lateral RESURF MOSFETs”,
Int. Conf. on Silicon Carbide and Related Materials 2013 (Miyazaki, Japan, 2013), We-P-42, p.245.

N. T. Son, X. T. Trinh, K. Kawahara, J. Suda, T. Kimoto, L. S. Løvlie, B. G. Svensson, K. Szasz, T. Hornos, A. Gali, T. Umeda, J. Isoya, T. Makino, T. Ohshima, and E. Janzén, “The carbon vacancy in SiC” (invited),
Int. Conf. on Silicon Carbide and Related Materials 2013 (Miyazaki, Japan, 2013), Th-1B-1, p.272.

G. Alfieri and T. Kimoto, “Minority carrier transient spectroscopy of as-grown, electron irradiated, and thermally oxidized p-type 4H-SiC”,
Int. Conf. on Silicon Carbide and Related Materials 2013 (Miyazaki, Japan, 2013), Th-1B-2, p.273.

W. M. Klahold, R. P. Devaty, W. J. Choyke, T. Kimoto, and T. Ohshima, “Annealing of electron irradiated, thick, ultrapure 4H SiC between 1100^oC and 1500^oC and measurements of lifetime and photoluminescence”,
Int. Conf. on Silicon Carbide and Related Materials 2013 (Miyazaki, Japan, 2013), Th-1B-4, p.275.

H. Niwa, J. Suda, and T. Kimoto, “Temperature dependence of impact ionization coefficients in 4H-SiC” (invited),
Int. Conf. on Silicon Carbide and Related Materials 2013 (Miyazaki, Japan, 2013), Th-2A-1, p.277.

K. Adachi, H. Okamoto, H. Yamaguchi, T. Kimoto, and J. Suda, “Single-crystalline 4H-SiC microcantilever resonators with a 10 times higher quality factor than 3C-SiC”,
Int. Conf. on Silicon Carbide and Related Materials 2013 (Miyazaki, Japan, 2013), Th-3A-1, p.287.

K. Sato, K. Adachi, H. Okamoto, H. Yamaguchi, T. Kimoto, and J. Suda, “Fabrication of electrostatically actuated 4H-SiC microcantilever resonators by using n/p/n epitaxial structures and doping-selective electrochemical etching”,
Int. Conf. on Silicon Carbide and Related Materials 2013 (Miyazaki, Japan, 2013), Th-P-33, p.329.

C. Kawahara, J. Suda, and T. Kimoto, “Identification of dislocations in 4H-SiC epilayers and substrates using photoluminescence imaging”
Int. Conf. on Silicon Carbide and Related Materials 2013 (Miyazaki, Japan, 2013), Fr-1B-3, p.367.

T. Kimoto, “Current main issues in SiC electronics: what limits the performance of SiC?” (invited),
Tutorial Day of Int. Conf. on Silicon Carbide and Related Materials 2013 (Miyazaki, Japan, 2013).

H. Tanaka, N. Morioka, S. Mori, J. Suda, and T. Kimoto, “Size and geometric effects on conduction band structure of GaAs nanowires”,
2013 IEEE Int. Meeting for Future of Electron Devices, Kansai (Osaka, Japan, 2013), B-4, p.118-119.

T. Kimoto, H. Yoshioka, Y. Nanen, S. Nakazawa, and J. Suda, “Physics of SiC MOS interface for high-voltage power devices” (invited),
12th Int. Conf. on Atomically Controlled Surfaces, Interfaces and Nanostructures (Tsukuba, Japan, 2013), p.120 (7aC1-1(I)).

T. Kimoto, H. Miyake, H. Niwa, T. Okuda, N. Kaji, and J. Suda, “Progress and future challenges of high-voltage SiC power devices” (invited),
2013 Fall Meeting, Mater. Res. Soc. (Boston, USA, 2013), T.8.1.

T. Kimoto, H. Yoshioka, and T. Nakamura, “Physics of SiC MOS interface and development of trench MOSFETs” (invited),
1st IEEE Workshop on Wide Bandgap Power Devices and Applications (Columbus, USA, 2013), S10.1/1-4.

J. Suda and T. Kimoto, “Ultrahigh-voltage SiC power devices for green society” (invited),
Swiss-Kyoto Symposium (Zurich, Switzerland, 2013), H4-10.

H. Niwa, J. Suda, and T. Kimoto, “Measurement of impact lionization coefficient in 4H-SiC toward ultrahigh-voltage power devices”,
Swiss-Kyoto Symposium (Zurich, Switzerland, 2013), H4-12.

N.T. Son, X.T. Trinh, K. Kawahara, J. Suda, T. Kimoto, L.S. Lovlie, B.G. Svensson, K. Szasz, T. Hornos, A. Gali, T. Umeda, J. Isoya, T. Makino, T. Ohshima, and E. Janzén, “Carbon vacancy- the lifetime killing defect in SiC” (invited),
16th Int. Symp. on the Phys. of Semiconductors and Applications (Cheju, Korea, 2013), D1-I-03.

T. Hatakeyama, M. Someya, K. Fukuda, H. Okumura, and T. Kimoto, “Evaluation of traps in 4H-SiC/SiO₂ interface” (invited),
2013 Int. Workshop on Dielectric Thin Films for Future Electron Devices – Science and Technology (Tsukuba, Japan, 2013), S4-1.

A. Castellazzi, T. Funaki, T. Kimoto, and T. Hikihara, “Short-circuit tests on SiC power MOSFETs”,
IEEE 10th Int. Conf. on Power Electronics and Drive Systems (Kitakyusyu, Japan, 2013), pp. 1297-1300.

Y. Yonezawa, T. Mizushima, K. Takenaka, H. Fujisawa, T. Kato, S. Harada, Y. Tanaka, M. Okamoto, Y. Makifuchi, E. Morisaki, K. Fukuda, H. Okumura, and T. Kimoto, “Low V_f and highly reliable 16 kV ultrahigh voltage SiC flip-type n-channel implantation and epitaxial IGBT”,
2013 Int. Electron Device Meeting (Washington DC, USA, 2013), 6.6.