International Journals

S. Kozakai, M. Kaneko, and T. Kimoto,
“Dopant activation and deep levels in Al-ion channeling-implanted 4H-SiC,”
Jpn. J. Appl. Phys. 65 020908 (2026).

Review Article

Conference Proceedings

International Presentations

T. Kimoto,
“Unlocking Power Efficiency: The Rise and Impacts of SiC Semiconductor Technology” (Keynote Lecture),
Research Excellence, Industrial Strategy and International Collaboration
– Top Scientist Lecture on Semiconductors (Stockholm, 2026).

Books

木本 恒暢,
「SiC MOS」(第3章)
『半導体の酸化機構と酸化膜』(近代科学社, 2026), pp.76-101.