International Journals

Y. Nishi, and T. Kimoto, “Effect of NiO crystallinity on forming characteristics in Pt/NiO/Pt cells as resistive switching memories”,
J. Appl. Phys., 120, 115308 (2016).

M. Kaneko, T. Kimoto, and J. Suda, “Strong impact of the initial III/V ratio on the crystalline quality of an AlN layer grown by rf plasma-assisted molecular-beam epitaxy”,
Appl. Phys. Exp., 9, 025502/1-4 (2016).

S. Asada, T. Okuda, T. Kimoto, and J. Suda, “Hall scattering factors in p-type 4H-SiC with various doping concentrations”,
Appl. Phys. Exp., 9, 041301/1-4 (2016).

A. Tanaka, H. Matsuhata, N. Kawabata, D. Mori, K. Inoue, M. Ryo, T. Fujimoto, T. Tawara, M. Miyazato, M. Miyajima, K. Fukuda, A. Ohtsuki, T. Kato, H. Tsuchida, Y. Yonezawa, and T. Kimoto, “Growth of shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes”,
J. Appl. Phys., 119, 095711/1-9 (2016).

T. Kobayashi, S. Nakazawa, T. Okuda, J. Suda, and T. Kimoto, “Interface state density of SiO₂/p-type 4H-SiC (0001), (11-20) and (1-100) metal-oxide-semiconductor structures characterized by low-temperature subthreshold slopes”,
Appl. Phys. Lett., 108, 152108/1-4 (2016).

T. Okuda, T. Kobayashi, T. Kimoto, and J. Suda, “Surface passivation on 4H-SiC epitaxial layers by SiO₂ with POCl₃ annealing”,
Appl. Phys. Exp., 9, 051301/1-4 (2016).

M. Kaneko, J. Suda, and T. Kimoto, “Strain control in AlN top layer by inserting an ultrathin GaN interlayer on an AlN template coherently grown on SiC (0001) by PAMBE”,
Phys. Stat. Sol. (b), 253, 814-818 (2016).

E. Saito, J. Suda, and T. Kimoto, “Control of carrier lifetime of thick n-type 4H-SiC epilayers by high-temperature Ar annealing”,
Appl. Phys. Exp., 9, 061303/1-3 (2016).

K. Danno, M. Saito, A. Seki, K. Sato, T. Bessho, and T. Kimoto, “Solubility and diffusion of chromium in 4H-SiC”,
Appl. Phys. Exp., 9, 061301/1-4 (2016).

T. Kimoto, K. Yamada, H. Niwa, and J. Suda, “Promise and challenges of high-voltage SiC bipolar power devices”,
Energies, 9, 908-922 (2016).

H. Tanaka, J. Suda, and T. Kimoto, “Analysis of ballistic and quasi-ballistic hole transport properties in germanium nanowires based on an extended “Top of the Barrier” model”,
Solid State Electronics, 123, 143–149 (2016).

H. Tanaka, J. Suda, and T. Kimoto, “Modeling of surface roughness scattering in nanowires based on atomistic wave function: Application to hole mobility in rectangular germanium nanowires”,
Phys. Rev. B, 93, 155303 (2016).

M. Yoshikawa, K. Kosaka, H. Seki, and T. Kimoto, “Stress characterization of 4H-SiC metal-oxide-semiconductor field-effect transistor (MOSFET) using Raman spectroscopy and the finite element method”,
Applied Spectroscopy, 70, 1209-1213 (2016).

T. Kimoto, K. Kawahara, B. Zippelius, E. Saito, and J. Suda, “Control of carbon vacancy in SiC toward ultrahigh-voltage power devices”,
Superlattices and Microstructures, 99, 151–157 (2016).

T. Maeda, M. Okada, M. Ueno, Y. Yamamoto, M. Horita, and J. Suda, “Franz-Keldysh effect in n-type GaN Schottky barrier diode under high reverse bias voltage”,
Appl. Phys. Express, 9, 091002 (2016).

Review Article

T. Kimoto, “Bulk and epitaxial growth of silicon carbide”,
Progress in Crystal Growth and Characterization of Materials, 62, 329-351 (2016).

Conference Proceedings

S. Mori, M. Aketa, T. Sakaguchi, H. Asahara, T. Nakamura, and T. Kimoto, “Demonstration of 3 kV 4H-SiC reverse blocking MOSFET ”,
Proc. of the 28th IEEE Int. Symp. on Power Semiconductor Devices and ICs (Plague, Czech, 2016), pp.271-274.

K. Murakami, S. Tanai, T. Okuda, J. Suda, T. Kimoto, and T. Umeda, “ESR study on hydrogen passivation of intrinsic defects in p-type and semi-insulating 4H-SiC”,
Mater. Sci. Forum, 858, 318-321, (2016).

Y. Katsu, T. Hosoi, Y. Nanen, T. Kimoto, T. Shimura, and H. Watanabe, “Impact of NO annealing on flatband voltage instability due to charge trapping in SiC MOS devices”,
Mater. Sci. Forum, 858, 599-602 (2016).

J. Suda, “SiC and GaN from the viewpoint of vertical power devices”,
Device Research Conference – Conference Digest, (2016), 7548292.

J. Suda, and M. Horita, “Characterization of n-type and p-type GaN layers grown on free-standing GaN substrates”
43^rd International Symposium on Compound Semiconductors, (2016), 7528835.

International Presentations

T. Kimoto, K. Kawahara, B. Zippelius, E. Saito, and J. Suda, “Control of carbon vacancy in SiC toward ultrahigh-voltage devices”,
2016 Int. Sympo. on Photonics and Electronics Science and Engineering (Kyoto, 2016), II-2.

T. Kimoto, K. Kawahara, N. Kaji, H. Fujihara, and J. Suda, “Ion implantation technology in SiC for high-voltage /high-temperature devices” (invited),
16th IEEE Int. Workshop on Junction Technology, (Shanghai, China, 2016), S-3-5.

T. Kimoto, “Progress in process technologies for SiC Power devices” (invited),
The 229th Electrochemical Society Spring Meeting (San Diego, USA, 2016), G02-1169.

S. Mori, M. Aketa, T. Sakaguchi, H. Asahara, T. Nakamura, and T. Kimoto, “Demonstration of 3 kV 4H-SiC reverse blocking MOSFET”,
28th IEEE Int. Symp. on Power Semiconductor Devices and ICs (Plague, Czech, 2016), C2L-A-1.

T. Kimoto, “Fundamentals, promise, and future challenges of wide bandgap semiconductor power devices” (invited lecture),
28th IEEE Int. Symp. on Power Semiconductor Devices and ICs (Plague, Czech, 2016), Short Course, SC-1.

H. Tanaka, J. Suda, and T. Kimoto, “Theoretical analysis of high-field hole transport in germanium and silicon nanowires”,
IEEE Si Nanoelectronics Workshop 2016 (Honolulu, USA, 2016), P2-19.

H. Tanaka, J. Suda, and T. Kimoto, “Insight into phonon scattering in Si nanowires through high-field hole transport: Impacts of boundary condition and comparison with bulk phonon approximation”,
33rd International Conference on the Physics of Semiconductors (Beijing, China, 2016) Th-P.151.

T. Kimoto, K. Kawahara, B. Zippelius, N. Kaji, E. Saito, and J. Suda, “Long carrier lifetime in SiC epilayers and high-voltage devices” (invited),
Int. Symp. on SiC Semiconductor in celebration of Jim Choyke (Pittsburgh, USA, 2016), I-2.

T. Kimoto, “Bulk and epitaxial growth of SiC” (invited lecture),
16th Int. Summer School on Crystal Growth (Otsu, Japan, 2016), Fr-2.

T. Kimoto, C. Kawahara, A. Iijima, T. Okuda, E. Saito, and J. Suda, “Extended and point defects in 4H-SiC epitaxial layers” (invited),
The 18th Int. Conf. on Crystal Growth and Epitaxy (ICCGE18) (Nagoya, Japan, 2016), Fr1-T10-1.

Y. Tokuda, I. Kamata, N. Hoshino, T. Kato, H. Okumura, T. Kimoto, and H. Tsuchida, “Dislocation velocity of Shockley partials for stacking fault expansion in heavily-nitrogen-doped 4H-SiC”,
The 18th Int. Conf. on Crystal Growth and Epitaxy (ICCGE18) (Nagoya, Japan, 2016), Fr1-T10-3.

T. Kimoto, “Frontiers and future challenges of SiC power devices” (invited lecture),
TIA Power Electronics Summer School 2016 (Tsukuba, Japan, 2016), III-3.

Y. Nishi, H. Sasakura, Y. Kuriyama, and T. Kimoto, “Conductance Quantization in Binary-oxide-based ReRAM Cells” (invited),
Int. Microprocesses and Nanotechnology Conference (Kyoto, 2016), 11C-8-1.

T. Kimoto, “Material for SiC MOSFET fabrication (bulk/epitaxial growth, selection criteria, defects, screening methods)” (invited lecture),
Europ. Conf. on Silicon Carbide and Related Materials 2016 (Halkidiki, Greece, 2016), Tutorial, 2.

M. Kaneko, T. Kimoto, and J. Suda, “Periodically aligned misfit dislocations at AlN/SiC heterointerface”,
Europ. Conf. on Silicon Carbide and Related Materials 2016 (Halkidiki, Greece, 2016), Mo2a.05.

A. Iijima, J. Suda, and T. Kimoto, “Correlation between shapes of shockley stacking faults and structure of basal plane dislocations in 4H-SiC epilayers” (invited),
Europ. Conf. on Silicon Carbide and Related Materials 2016 (Halkidiki, Greece, 2016), Mo2b.01.

Y. Tokuda, I. Kamata, T. Yamashita, T. Naijo, T. Miyazawa, N. Hoshino, T. Kato, H. Okumura, T. Kimoto, and H. Tsuchida, “Structure and glide velocity of leading partials for expanding double shockley stacking faults in n⁺-type 4H-SiC”,
Europ. Conf. on Silicon Carbide and Related Materials 2016 (Halkidiki, Greece, 2016), Mo2b.02.

S. Asada, T. Kimoto, and J. Suda, “Origin of shunt current in 4H-SiC mesa p-n diodes passivated by SiO₂ with post-oxidation nitridation”,
Europ. Conf. on Silicon Carbide and Related Materials 2016 (Halkidiki, Greece, 2016), Mo3.01.

T. Tawara T. Miyazawa, M. Ryo, M. Miyazato, T. Fujimoto, K. Takenaka, S. Matsunaga, M. Miyajima, A. Otsuki , Y. Yonezawa, T. Kato, H. Okumura, T. Kimoto, and H. Tsuchida, “Suppression of the forward degradation in 4H-SiC PiN diodes by employing a recombination-enhanced buffer layer”,
Europ. Conf. on Silicon Carbide and Related Materials 2016 (Halkidiki, Greece, 2016), Tu1.05.

I. D. Booker, T. Okuda, E. O. Sveinbjornsson, P. Grivickas, J. Hassan, R. Karhu, J. Suda, E. Janzen, and T. Kimoto, “Device-relevant and processing induced deep level traps and recombination centers in 4H-SiC” (invited),
Europ. Conf. on Silicon Carbide and Related Materials 2016 (Halkidiki, Greece, 2016), Tu2a.01.

H. Tanaka, S. Asada, T. Kimoto, and J. Suda, “Theoretical analysis of hole density, hole mobility, and hall scattering factor in p-type 4H-SiC”,
Europ. Conf. on Silicon Carbide and Related Materials 2016 (Halkidiki, Greece, 2016), Tu2a.04.

T. Kobayashi, J. Suda, and T. Kimoto, “Reduction of interface state density in SiC(0001) MOS structures by post-oxidation Ar annealing at high temperature”,
Europ. Conf. on Silicon Carbide and Related Materials 2016 (Halkidiki, Greece, 2016), Th1.05.

T. Enokizono, T. Kimoto, and J. Suda, “Etching mode in electrochemical etching of p-type 4H-SiC and its impact on suppression of etch pits”,
Europ. Conf. on Silicon Carbide and Related Materials 2016 (Halkidiki, Greece, 2016), MoP.11.

K. Hiramatsu, T. Okuda, J. Suda, and T. Kimoto, “High selectivity in SiC/SiO₂ etching by ICP-RIE in a SF₆-O₂-Ar chemistry”,
Europ. Conf. on Silicon Carbide and Related Materials 2016 (Halkidiki, Greece, 2016), MoP.16.

H. Niwa, J. Suda, and T. Kimoto, “Demonstration of 10 kV SiC hybrid unipolar/bipolar operating diodes”,
Europ. Conf. on Silicon Carbide and Related Materials 2016 (Halkidiki, Greece, 2016), LN.01.

Y. Ichikawa, M. Ichimura, T. Kimoto, M. Kato“, Dependence of surface recombination velocity for 4H-SiC on contacted aqueous solution”,
Europ. Conf. on Silicon Carbide and Related Materials 2016 (Halkidiki, Greece, 2016), LN.01.

Y. Zhao, H. Niwa, J. Suda, and T. Kimoto, “Impact ionization coefficients in 4H-SiC at high temperatures”,
Europ. Conf. on Silicon Carbide and Related Materials 2016 (Halkidiki, Greece, 2016), LN.10.

M. Kaneko, T. Kimoto, and J. Suda, “Strain controls of high quality AlN layers by misfit dislocations introduces at step edges of SiC(0001) substrates”,
Int. Workshop on Nitride Semiconductors (Orlando, USA, 2016), A2.7.02.

T. Kimoto, “High-voltage SiC power devices for energy efficiency” (invited),
1st Int. Sympo. on Power Electronics 2016 (Kyoto, 2016), I-1.

T. Kimoto, H. Niwa, E. Saito, and J. Suda, “Lifetime control and breakdown analysis in SiC for ultrahigh-voltage power devices” (invited),
2016 Mater. Res. Soc. Sympo. Fall Meeting (Boston, USA, 2016), EM11.6.01.

T. Kimoto,“Progress and future challenges of SiC power devices” (invited),
Minicolloquium on Advanced Electron Devices, MIT (Boston, USA, 2016).

Y. Nishi, H. Sasakura, and T. Kimoto,  “The appearance condition of quantized conductance in NiO-based resistibe switching cells”,
2016 Mater. Res. Soc. Sympo. Fall Meeting (Boston, USA, 2016), EM10.2.01.

M. Horita, T. Narita, T. Kachi, T. Uesugi, and J. Suda, “Wafer-Level Mapping of Net Donor and Deep-Level Trap Concentrations in MOVPE-Grown Homoepitaxial n-Type GaN”,
International Workshop on Nitride Semiconductors (Orlando, USA, 2016), D1. 7. 03.

T. Maeda, M. Okada, M. Ueno, Y. Yamamoto, M. Horita, and J. Suda, “Photocurrent Induced by Sub-Bandgap-Wavelength Light Absorption Due to Franz-Keldysh Effect in n-Type GaN Schottky barrier diode under Large Reverse Bias”,
International Workshop on Nitride Semiconductors (Orlando, USA, 2016), D1. 7. 05.

S. Takashima, K. Ueno, H. Matsuyama, M. Edo, K. Nakagawa, M. Horita, and J. Suda, “Mg Doping Dependence of GaN MOSFETs Fabricated on Homoepitaxial p-GaN Layers”,
International Workshop on Nitride Semiconductors (Orlando, USA, 2016), C0. 5. 03.

N. Sawada, T. Narita, M. Kanechika, T. Uesugi, T. Kachi, M. Horita, and J. Suda, “Si-Donor Ionization Energy and Compensating Effect in MOVPE-Grown Homoepitaxial n-Type GaN with Various Doping Concentrations”
International Workshop on Nitride Semiconductors (Orlando, USA, 2016),  D1. 11. 07.