2014 - Semicon Lab.

International Journals

N. Morioka, J. Suda, and T. Kimoto, “Etching-limiting process and origin of loading in silicon etching with hydrogen chloride gas”,
Jpn. J. Appl. Phys., 53, 016502/1-7 (2014).

C. Kawahara, J. Suda, and T. Kimoto, “Identification of dislocations in 4H-SiC epitaxial layers and substrates using photoluminescence imaging”,
Jpn. J. Appl. Phys., 53, 020304/1-3 (2014).

H. Yoshioka, T. Nakamura, and T. Kimoto, “Characterization of very fast states in the vicinity of the conduction band edge at the SiO₂/SiC interface by low temperature conductance measurements”,
J. Appl. Phys., 115, 014502/1-4 (2014).

G. Alfieri and T. Kimoto, “Ab initio prediction of SiC nanotubes with negative strain energy”
Appl. Phys. Lett. 104, 033107/1-3 (2014).

H. Tanaka, N. Morioka, S. Mori, J. Suda, and T. Kimoto, “Quantum-confinement effects on conduction band structure of rectangular cross-sectional GaAs nanowires”,
J. Appl. Phys.,115, 053713/1-7 (2014).

H. Miyake, T. Kimoto, and J. Suda, “Effect of ultrathin AlN spacer on electronic properties of GaN/SiC heterojunction bipolar transistors”,
Jpn. J. Appl. Phys. 53, 034101/1-5 (2014).

G. Alfieri and T. Kimoto, “Detection of minority carrier traps in p-type 4H-SiC”,
Appl. Phys. Lett., 104, 092105/1-3 (2014).

M. Horita, M. Noborio, T. Kimoto, and J. Suda, “4H-SiC MISFETs with 4H-AlN gate insulator isopolytypically grown on 4H-SiC (11-20)”,
IEEE Electron Device Lett., 35, 339-341 (2014).

K. Kawahara, X.T. Trinh, N.T. Son, E. Janzen, J. Suda, and T. Kimoto, “Quantitative comparison between Z_1/2 center and carbon vacancy in 4H-SiC”,
J. Appl. Phys., 115, 143705/1-6 (2014).

T. Okuda, T. Miyazaki, H. Tsuchida, T. Kimoto, and J. Suda, “Enhancement of carrier lifetime in lightly Al-doped p-type 4H-SiC epitaxial layers by combination of thermal oxidation and hydrogen annealing”,
Appl. Phys. Exp., 7, 085501/1-3 (2014).

H. Tanaka, S. Mori, N. Morioka, J. Suda, and T. Kimoto, “Phonon-limited electron mobility in rectangular cross-sectional Ge nanowires”,
IEEE Trans. Electron Devices, 61, 1993-1998 (2014).

N. Watanabe, T. Kimoto, and J. Suda, “Temperature dependence of optical absorption coefficient of 4H- and 6H-SiC from room temperature to 300 ^oC”,
Jpn. J. Appl. Phys., 53, 108003/1-3 (2014).

H. Tanaka, S. Mori, N. Morioka, J. Suda, and T. Kimoto, “Geometrical and band-structure effects on phonon-limited hole mobility in rectangular cross-sectional germanium nanowires”,
J. Appl. Phys., 116, 235701/1-7 (2014).

T. Kobayashi, J. Suda, and T. Kimoto, “Impact of conduction type and doping density on thermal oxidation rate of SiC(0001)”,
Appl. Phys. Exp., 7, 121301/1-3 (2014).

T. Hayashi, T. Okuda, J. Suda, and T. Kimoto, “Decay curve analyses in carrier lifetime measurements of p- and n-type 4H-SiC epilayers”,
Jpn. J. Appl. Phys., 53, 111301/1-5 (2014).

M. Yoshikawa, H. Seki, K. Inoue, Y. Nanen, and T. Kimoto, “Characterization of inhomogeneity in silicon dioxide films on 4H-Silicon carbide epitaxial substrate using a combination of Fourier transform infrared and cathodoluminescence spectroscopy ”,
Appl. Spectroscopy, 68, 1176-1180 (2014).

H. Okumura, T. Kimoto, and J. Suda, “Formation mechanism of threading-dislocation array in AlN layers grown on 6H-SiC (0001) substrates with 3-bilayer-high surface steps”,
Appl. Phys. Lett., 105, 071603/1-4 (2014).

Review Article

T. Kimoto, “Ultra-high voltage devices for future power infrastructure” (feature article)
Compound Semiconductor, 20, 52-57 (2014).

Conference Proceedings

G. Alfieri and T. Kimoto, “Minority carrier transient spectroscopy of as-grown, electron irradiated, and thermally oxidized p-type 4H-SiC”,
Mater. Sci. Forum, 778-780, 269-272 (2014).

W. M. Klahold, R. P. Devaty, W. J. Choyke, K. Kawahara, T. Kimoto, and T. Ohshima, “Annealing of electron irradiated, thick, ultrapure 4H SiC between 1100°C and 1500°C and measurements of lifetime and photoluminescence”,
Mater. Sci. Forum, 778-780, 273-276 (2014).

X. T. Trinh, K. Szász, T. Hornos, K. Kawahara, J. Suda, T. Kimoto, A. Gali, E. Janzén, and N. T. Son, “Identification of the negative carbon vacancy at quasi-cubic site in 4H-SiC by EPR and theoretical calculations”,
Mater. Sci. Forum, 778-780, 285-288 (2014).

H. Yoshioka, T. Nakamura, J. Senzaki, A. Shimozato, Y. Tanaka, H. Okumura, and T. Kimoto, “Accurate characterization of interface state density of SiC MOS structures and the impacts on channel mobility”,
Mater. Sci. Forum, 778-780, 418-423 (2014).

T. Hatakeyama, M. Sometani, K. Fukuda, H. Okumura, and T. Kimoto, “Deep-level transient spectroscopy characterization of interface states in SiO₂/4H-SiC structures close to the conduction band edge”,
Mater. Sci. Forum, 778-780, 424-427 (2014).

H. Niwa, J. Suda, and T. Kimoto, “Temperature dependence of impact ionization coefficients in 4H-SiC”,
Mater. Sci. Forum, 778-780, 461-466 (2014).

K. Sato, K. Adachi, H. Okamoto, H. Yamaguchi, T. Kimoto, and J. Suda, “Fabrication of electrostatically actuated 4H-SiC microcantilever resonators by using n/p/n epitaxial structures and doping-selective electrochemical etching”,
Mater. Sci. Forum, 778-780, 780-783 (2014).

N. Kaji, H. Niwa, J. Suda, and T. Kimoto, “Ultrahigh-voltage (> 20 kV) SiC PiN diodes with a space-modulated JTE and lifetime enhancement process via thermal oxidation”,
Mater. Sci. Forum, 778-780, 832-835 (2014).

Y. Nanen, J. Suda, and T. Kimoto, “Designing of quasi-modulated region in 4H-SiC lateral RESURF MOSFETs”,
Mater. Sci. Forum, 778-780, 943-946 (2014).

T. Kimoto, K. Kawahara, H. Niwa, N. Kaji, and J. Suda, “Ion implantation technology in SiC for power device applications” (plenary),
Proc. of IEEE 2014 Int. Workshop on Junction Technology (Shanghai, China, 2014), K1, pp.1-6.

T. Kimoto, “Progress and future challenges of silicon carbide devices for integrated circuits”(invited),
Proc. of IEEE 2014 Custom Integrated Circuits Conf. (San Jose, USA, 2014) 03-1.

T. Kimoto, J. Suda, Y. Yonezawa, K. Asano, K. Fukuda and H. Okumura, “Progress in ultrahigh-voltage SiC devices for future power infrastructure” (invited),
Tech. Digest of 2014 IEEE Int. Electron Devices Meeting (San Francisco, USA, 2014), 2.5.

T. Mizushima, K. Takenaka, H. Fujisawa, T. Kato, S. Harada, Y. Tanaka, M. Okamoto, M. Sometani, D. Okamoto, N. Kumagai, S. Matsunaga, T. Deguchi, M. Arai, T. Hatakeyama, Y. Makifuchi, T. Araoka, N. Oose, T. Tsutsumi, M. Yoshikawa, K. Tatera, A. Tanaka, S. Ogata, K. Nakayama, T. Hayashi, K. Asano, M. Harashima, Y. Sano, E. Morisaki, M. Takei, M. Miyajima, H. Kimura, A. Otsuki, Y. Yonezawa, K. Fukuda, H. Okumura, and T. Kimoto, “Dynamic characteristics of large current capacity module using 16-kV ultrahigh voltage SiC flip-type n-channel IE-IGBT,”
Proc. 26th Int. Symp. on Power Semicond. Devices & ICs (Waikoloa, USA, 2014), pp. 277-280.

International Presentations

T. Kimoto, K. Kawahara, H. Niwa, N. Kaji, and J. Suda, “Ion implantation technology in SiC for power device applications” (plenary),
Ext. Abstr. of IEEE 14th Int. Workshop on Junction Technology (Shanghai, China, 2014), pp.1-6.

H. Tanaka, S. Mori, N. Morioka, J. Suda, and T. Kimoto, “Orientation and size effects on phonon-limited hole mobility in rectangular cross-sectional germanium nanowires”,
2014 IEEE Silicon Nanoelectronics Workshop (Honolulu, USA, 2014), P2-6.

S. Asada, T. Okuda, T. Kimoto, and J. Suda, “Temperature dependence of current gain in 4H-SiC bipolar junction transistors”,
Int. Conf. of Solid State Devices & Materials (Tsukuba, USA, 2014), E-4-3.

T. Kimoto, “Progress and future challenges of silicon carbide devices for integrated circuits” (invited),
IEEE 2014 Custom Integrated Circuits Conf. (San Jose, USA, 2014) 03-1.

T. Okuda, T, Miyazawa, H. Tsuchida, T. Kimoto, and J. Suda, “Improvement of carrier lifetimes in lightly-doped p-type 4H-SiC epitaxial layers by combination of thermal oxidation and hydrogen passivation”,
Europ. Conf. on Silicon Carbide and Related Materials 2014 (Grenoble,

France, 2014), MO-P-36.

S. Nakazawa, T. Okuda, T. Kobayashi, J. Suda, T. Nakamura, and T. Kimoto, “Interface properties and mobility-limiting factors in 4H-SiC(0001), (11-20), and (1-100) MOS structures” (invited),
Europ. Conf. on Silicon Carbide and Related Materials 2014 (Grenoble, France, 2014), TU3-IS-01. .

N. Thierry-Jebali , C. Kawahara, T. Miyazawa, H. Tsuchida, and T. Kimoto, “Identification of stacking faults by UV photoluminescence imaging spectroscopy on thick, lightly-doped n-type 4°-off 4H-SiC epilayers”,
Europ. Conf. on Silicon Carbide and Related Materials 2014 (Grenoble, France, 2014), TU-P-38.

T. Kobayashi, J. Suda, and T. Kimoto, “Influence of conduction-type on thermal oxidation rate in SiC(0001) with various doping densities”,
Europ. Conf. on Silicon Carbide and Related Materials 2014 (Grenoble, France, 2014), TU-P-55.

K. Sato, K. Adachi, H. Okamoto, H. Yamaguchi, T. Kimoto, and J. Suda, “High-temperature operation of electrostatically-excited single-crystalline 4H-SiC microcantilever resonators”,
Europ. Conf. on Silicon Carbide and Related Materials 2014 (Grenoble, France, 2014), TU-P-69.

M. Yoshikawa, H. Seki, K. Inoue, T. Kobayashi, and T. Kimoto, “Characterization of inhomogeneity in SiO₂ films on 4H-SiC epitaxial substrate by a combination of Fourier transform infrared spectroscopy and cathodoluminescence spectroscopy”,
Europ. Conf. on Silicon Carbide and Related Materials 2014 (Grenoble, France, 2014), WE-P-33.

T. Hosoi, Y. Nanen, T. Kimoto, A. Yoshigoe, Y. Teraoka, T. Shimura, and H. Watanabe, “Synchrotron radiation photoemission spectroscopy study of SiO₂/4H-SiC(0001) interfaces with NO annealing”,
Europ. Conf. on Silicon Carbide and Related Materials 2014 (Grenoble, France, 2014), WE-P-LN-10.

Y. Yonezawa, T. Mizushima, K. Takenaka, H. Fujisawa, T. Kato, Y. Tanaka, D. Okamoto, M. Sometani, N. Kumagai, T. Hatakeyama, M. Takei, M. Arai, K. Takeo, T. Hayashi, K. Nakayama, K. Asano, M. Miyajima, K. Fukuda, H. Okumura, and T. Kimoto, “Device performance and switching characteristics of 16 kV ultra-high voltage SiC flip-type n-channel IE-IGBTs”,
Europ. Conf. on Silicon Carbide and Related Materials 2014 (Grenoble, France, 2014), WE-P-70.

C. Kawahara, J. Suda, and T. Kimoto, “Motion of basal-plane dislocations in thick 4H-SiC epilayers with different conduction types and various doping densities”,
Europ. Conf. on Silicon Carbide and Related Materials 2014 (Grenoble, France, 2014), TH2-OR-04.

H. Niwa, J. Suda, and T. Kimoto, “Determination of impact ionization coefficients in 4H-SiC toward ultrahigh-voltage power devices”,
Europ. Conf. on Silicon Carbide and Related Materials 2014 (Grenoble, France, 2014), TH3-OR-01.

T. Kimoto, H. Niwa, T. Okuda, N. Kaji, and J. Suda, “Progress and future challenges in SiC material for high-voltage power devices” (invited),
American Vaccum Soc. 61st Int. Symp. (Baltimore, USA, 2014), EM1-WeM3.

Y. Nishi, T. Iwata, and T. Kimoto, “DC and AC conduction mechanism in different resistance states of Pt/NiO/Pt stack structures”,
2014 Mater. Res. Soc. Fall Meeting (Boston, USA, 2014), AM-M4.05.

T. Kobayashi, J. Suda and T. Kimoto, “Conduction-type dependence of thermal oxidation rate on SiC(0001)”,
2014 Int. Meeting for Future of Electron Devices, Kansai (Kyoto, 2014), PB-01.

T. Kimoto, “Frontiers and future challenges of SiC power devices” (invited lecture),
TIA Power Electronics Summer School 2014 (Tsukuba, 2014), III-3.

T. Kimoto, “SiC device; current status and future” (invited),
2014 Asia-Pacific Microwave Conf. (Sendai, 2014), WS1C-02.

T. Kimoto, J. Suda, Y. Yonezawa, K. Asano, K. Fukuda and H. Okumura, “Progress in ultrahigh-voltage SiC devices for future power infrastructure” (invited),
2014 IEEE Int. Electron Devices Meeting (San Francisco, USA, 2014), 2.5.

T. Kimoto, “Progress in SiC power devices and manufacturing technology” (invited),
Int. Symp. on Semiconductor Manufacturing 2014 (Tokyo, 2014).

Y. Yonezawa, T. Mizushima, K. Takenaka, H. Fujisawa, T. Kato, D. Okamoto, M. Sometani, T. Deguchi, S. Harada, Y. Tanaka, S. Matsunaga, T. Hatakeyama, M. Okamoto, M. Yoshikawa, N. Oose, M. Ryo, H. Kimura, M. Miyajima, N. Kumagai, M. Takei, M. Arai, K. Takao, T. Izumi, T. Hayashi, K. Nakayama, K. Asano, A. Otsuki, K. Fukuda, H. Okumura, and T. Kimoto, “Fabrication and performance of 16-kV ultrahigh-voltage SiC power devices” (plenary),
226th Meeting of Electrochemical Soc. 2014 (Cancun, 2014), 1959.