2022

International Journals

T. Maeda, T. Narita, S. Yamada, T. Kachi, T. Kimoto, M. Horita, and J. Suda,
“Breakdown electric field of GaN p+-n and p-n+ junction diodes with various doping concentrations,”
IEEE Electron Device Lett., 43, 96 (2022).

K. Mikami, K. Tachiki, K. Ito, and T. Kimoto,
“Body doping dependence of field-effect mobility in both n- and p-channel 4H-SiC metal-oxide-semiconductor field-effect transistors with nitrided gate oxides,”
Appl. Phys. Express, 15, 036503 (2022).

K. Takahashi, H. Tanaka, M. Kaneko, and T. Kimoto,
“Carrier Trapping Effects on Forward Characteristics of SiC p-i-n Diodes Fabricated on High-Purity Semi-Insulating Substrates,”
IEEE Trans. Electron Devices, 69, 1989 (2022).

M. Hara, H. Tanaka, M. Kaneko, and T. Kimoto,
“Critical electric field for transition of thermionic field emission/field emission transport in heavily doped SiC Schottky barrier diodes,” 
Appl. Phys. Lett., 120, 172103 (2022).

T. Hosoi, M. Ohsako, K. Moges, K. Ito, T. Kimoto, M. Sometani, M. Okamoto, A. Yoshigoe, T. Shimura, and H. Watanabe,
“Impact of post-nitridation annealing in CO2 ambient on threshold voltage stability in 4H-SiC metal-oxide-semiconductor field-effect transistors,”
Appl. Phys. Express, 15, 061003 (2022).

H. Tanaka, T. Kimoto, and N. Mori,
“Simulation analysis of high-field carrier transport in wide-bandgap semiconductors considering tunable band structures and scattering processes,”
J. Appl. Phys., 131, 225701 (2022).

K. Tachiki, K. Mikami, K. Ito, M. Kaneko, and T. Kimoto,
“Mobility enhancement in heavily doped 4H-SiC (0001), (11-20), and (1-100) MOSFETs via an oxidation-minimizing process,”
Appl. Phys. Express, 15, 071001 (2022).

M. Kaneko, M. Nakajima, Q. Jin, and T. Kimoto,
“SiC Complementary Junction Field-Effect Transistor Logic Gate Operation at 623 K,”
IEEE Electron Device Lett., 43, 997 (2022).

K. Ito, M. Horita, J. Suda, and T. Kimoto,
“Effective channel mobility in phosphorus-treated 4H-SiC (0001) metal-oxide-semiconductor field-effect transistors with various p-body doping concentrations,“
Jpn. J. Appl. Phys., 61, 098001 (2022).

Review Article

T. Kimoto,
“High-voltage SiC power devices for improved energy efficiency” (Review),
Proc. Japan Academy, Ser. B, 98, 161 (2022).

Conference Proceedings

T. Kimoto, K. Tachiki, A. Iijima, and M. Kaneko,
“Performance Improvement and Reliability Physics in SiC MOSFETs,”
Proc. of IEEE Int. Reliability Phys. Sympo. (Dallas/Virtual, 2022),
5B.1.1 – 5B.1.7.

F. Udrea, K. Naydenov, H. Kang, T. Kato, E. Kagoshima, H. Fujioka, H. Tomita, T. Nishiwaki, H. Fujiwara, and T.Kimoto,
“Experimental Demonstration, Challenges, and Prospects of the Vertical SiC FinFET,”
Proc. IEEE 34th Int. Symp. on Power Semiconductor Devices & ICs (ISPSD 2022) (Vancouver, 2022), 2-1.

International Presentations

T. Kimoto, K. Tachiki, A. Iijima, and M. Kaneko,
“Performance Improvement and Reliability Physics in SiC MOSFETs” (invited),
IEEE Int. Reliability Phys. Sympo. (Dallas/Virtual, 2022), 5B.1.

T. Kimoto,
“Defect Electronics in SiC Power Semiconductor” (invited),
2022 Physics Colloquium in Erlangen (Erlangen/Virtual, 2022), I-1.

T. Kimoto, A. Iijima, and M. Kaneko,
“Physical Understanding and Prevention of Bipolar Degradation in SiC Power Devices” (invited),
241st Electrochemical Society Meeting (Vancouver, 2022), E02-1135.

T. Kimoto,
“Progress and Future Challenges in SiC Power Semiconductor” (invited),
ETH Power Electronics Colloquium 2022 (Zurich, 2022).

M. Kaneko, M. Nakajima, Q. Jin, and T. Kimoto,
“High-Temperature Operation of SiC JFET-Based Complementary Circuits” (invited),
2022 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Virtual, 2022), B4-3.

F. Udrea, K. Naydenov, H. Kang, T. Kato, E. Kagoshima, H. Fujioka, H. Tomita, T. Nishiwaki, H. Fujiwara, and T. Kimoto,
“Experimental Demonstration, Challenges, and Prospects of the Vertical SiC FinFET,”
IEEE 34th Int. Symp. on Power Semiconductor Devices & ICs (ISPSD 2022) (Vancouver, 2022), 2-1.

T. Kimoto, K. Tachiki, K. Ito, K. Mikami, M. Kaneko, M. Horita, and J. Suda,
“High Mobility in SiC MOSFETs with Heavily-Doped p-Bodies” (invited),
14th Topical Workshop on Heterostructure Microelectronics (TWHM 2022) (Hiroshima, 2022), 2-2.