International Journals

T. Matsuoka, M. Kaneko, and T. Kimoto,
“Physical properties of sulfur double donors in 4H-SiC introduced by ion implantation”,
Jpn. J. Appl. Phys., 62, 010908 (2023).

M. Hara, M. Kaneko, and T. Kimoto,
“Enhanced tunneling current and low contact resistivity at Mg contacts on heavily phosphorus-ion-implanted SiC,”
Appl. Phys. Express, 16, 021003 (2023).

M. Kaneko, A. Tsibizov, T. Kimoto, and U. Grossner,
“Nearly Ideal Breakdown Voltage Observed in Lateral p-i-n Diodes 
Fabricated on a SiC High-Purity Semi-Insulating Substrate,”
IEEE Trans. Electron Devices, 70, 2153 (2023).

T. Kitawaki, M. Hara, H. Tanaka, M. Kaneko, and T. Kimoto,
“Impact of the split-off band on the tunneling current at metal/heavily-doped p-type SiC Schottky interfaces”,
Appl. Phys. Express, 16, 031005 (2023).

International Presentations

X. Chi, K. Tachiki, K. Mikami, M. Kaneko, and T. Kimoto,
“Different temperature dependence of mobility in n- and p-channel 4H-SiC MOSFETs,”
Mini-Conference on Next Generation Materials for Ultra Performance Microwave and Power Switching Applications (Online, 2023), 1-1.

K. Mikami, M. Kaneko, and T. Kimoto,
“Fundamental study on SiC p-channel MOSFETs,”
Mini-Conference on Next Generation Materials for Ultra Performance Microwave and Power Switching Applications (Online, 2023), 1-2.

Review Article

F. La Via, D. Alquier, F. Giannazzo, T. Kimoto, P. Neudeck, H. Ou, A. Roncaglia, S. E. Saddow, and S. Tudisco,
“Emerging SiC applications beyond power electronic devices,”
Micromachines, 14, 1200 (2023).