International Journals

K. Ito, H. Tanaka, M. Horita, J. Suda, and T. Kimoto,
“Free electron mobility limited by fixed charges and trapped electrons in 4H-SiC(1120) and (1100) MOSFETs annealed in NO,“
Jpn. J. Appl. Phys. 64, 010902 (2025).

K. Mikami, M. Kaneko, and T. Kimoto,
“Doping-dependent fixed charges in SiC/SiO₂ structure,”
Appl. Phys. Express 18, 034002 (2025).

M. Hara, H. Tanaka, M. Kaneko, and T. Kimoto, 
“Analysis of trap-assisted tunneling current at non-alloyed contacts formed on heavily ion-implanted n-type SiC,” 
J. Appl. Phys. 137, 135704 (2025).

N. Maeda, M. Kaneko, H. Tanaka, and T. Kimoto,
“First-order SPICE modeling of SiC p- and n-channel side-gate JFETs toward high-temperature complementary JFET ICs,”
APL Electronic Devices 1, 026110 (2025).

M. Hara, T. Nabatame, Y. Irokawa, T. Sawada, M. Miyamoto, H. Miura, T. Kimoto, and Y. Koide,
“A three-step surface treatment and its impacts on electrical properties of c– and m-face GaN/Al₂O₃ MOS structures,”
Materials Science in Semiconductor Processing 196, 109606 (2025).

Review Article

Conference Proceedings

T. Kimoto, R. Ishikawa, K. Tachiki, X. Chi, K. Mikami, and M. Kaneko,
“Fundamentals and Future Challenges of SiC Power Devices,”
Proc. of 9th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2025 (Hong Kong, 2025), M-6-1-1.

International Presentations

T. Kimoto, R. Ishikawa, K. Tachiki, X. Chi, K. Mikami, and M. Kaneko,
“Fundamentals and Future Challenges of SiC Power Devices” (invited),
9th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2025 (Hong Kong, 2025), M-6-1-1.

T. Kimoto, R. Ishikawa, K. Tachiki, X. Chi, K. Mikami, H. Tanaka, and M. Kaneko,
“Materials Science and Device Physics in SiC Electronics,”
International Symposium on Creation of Advanced Photonic and Electronic Devices 2025 (Kyoto, 2025), 1-2.

M. Kaneko, K. Tachiki, K. Mikami, H. Fujii, and T. Kimoto,
“Mobility improvement in SiC n- and p-channel MOSFETs,”
Japan-UK Joint Opportunity in Semiconductor Research (Southampton, 2025).

K. Mikami, M. Kaneko, and T. Kimoto,
“Fixed charges dependent on doping concentration in SiC/SiO₂ structures,”
Japan-UK Joint Opportunity in Semiconductor Research (Southampton, 2025).

F. Udrea and T. Kimoto,
“UP-SiC: Unlocking the Future Potential of Silicon Carbide in Power Electronics,”
Workshop on Japan and UK Joint Opportunity in Semiconductor Research
(Southampton, 2025).