International Journals

K. Kanegae, T. Narita, K. Tomita, T. Kachi, M. Horita, T. Kimoto, and J. Suda
“Photoionization cross section ratio of nitrogen-site carbon in GaN under sub-bandgap light irradiation determined by isothermal capacitance transient spectroscopy,”
Appl. Phys. Express, 14, 091004 (2021).

K. Tachiki and T. Kimoto
“Improvement of Both n- and p-Channel Mobilities in 4H-SiC MOSFETs by High-Temperature N₂ Annealing,”
IEEE Trans. Electron Devices, 68, 638 (2021).

K. Tachiki, M. Kaneko, and T. Kimoto
“Mobility improvement of 4H-SiC (0001) MOSFETs by a three-step process of H₂ etching, SiO₂ deposition, and interface nitridation,”
Appl. Phys. Express, 14, 031001 (2021).

K. Tachiki, T. Ono, T. Kobayashi, and T. Kimoto,
“Short-Channel Effects in SiC MOSFETs Based On analyses of Saturation Drain Current,”
IEEE Trans. Electron Devices, 68, 1382 (2021).

M. Hara, M. Kaneko, and T. Kimoto,
“Nearly Fermi-level-pinning-free interface in metal/heavily-doped SiC Schottky structures,”
Jpn. J. Appl. Phys., 60, SBBD14 (2021).

Q. Jin, M. Nakajima, M. Kaneko, and T. Kimoto,
“Lateral spreads of ion-implanted Al and P atoms in silicon carbide,”
Jpn. J. Appl. Phys., 60, 051001 (2021).

E. Do, M. Kaneko, and T. Kimoto,
”Expansion patterns of single Shockley stacking faults from scratches on 4H-SiC,”
Jpn. J. Appl. Phys., 60, 068001 (2021).

R. Ishikawa, M. Hara, H. Tanaka, M. Kaneko, and T. Kimoto,
”Electron mobility along <0001> and <1-100> directions in 4H-SiC over a wide range of donor concentration and temperature,”
Appl. Phys. Express, 14, 061005 (2021).

M. Sato, H. Tanaka, and T. Kimoto,
“Orientation and size effects on electronic structure of rectangular cross-sectional Sn nanowires,”
J. Appl. Phys., 129, 224302 (2021).

T. Maeda, T. Narita, S. Yamada, T. Kachi, T. Kimoto, M. Horita, and J. Suda,
“Impact ionization coefficients and critical electric field in GaN,”
J. Appl. Phys., 129, 185702 (2021).

K. Kanegae, T. Okuda, M. Horita, J. Suda, and T. Kimoto,
“Depth profiles of electron traps generated during reactive ion etching in n-type 4H-SiC characterized by using isothermal capacitance transient spectroscopy,” (Editor’s Pick)
J. Appl. Phys., 130, 105703 (2021).

Conference Proceedings

T. Kimoto, M. Kaneko, K. Tachiki, K. Ito, R. Ishikawa, X. Chi, D. Stefanakis, T. Kobayashi, and H. Tanaka,
“Physics and Innovative Technologies in SiC Power Devices,”
Tech. Digest of 67th IEEE Int. Electron Devices Meeting (San Francisco, 2021),
36-1-1 – 36-1-4.

International Presentations

T. Kimoto,
“WISE Program: Innovation of Advanced Photonic and Electronic Devices” (invited),
Int. Workshop on Education and Research for Future Electronics (Nagoya, Japan, 2021), IT3.

T. Kimoto, T. Kobayashi, K. Tachiki, K. Ito, and M. Kaneko,
“Progress and Future Challenges of SiC Power MOSFETs” (invited),
5th IEEE Electron Devices Technology and Manufacturing Conference 2021 (Chengdu, China/Online, 2021), FR2A2-2.

F. Udrea, K. Naydenov, H. Kang, T. Kato, E. Kagoshima, T. Nishiwaki, H. Fujiwara, and T. Kimoto,
“The FinFET Effect in Silicon Carbide MOSFETs,”
33rd Int. Symp. on Power Semiconductor Devices & ICs (ISPSD) 2021 (Nagoya/Online, 2021), 4-2.

K. Tachiki and T. Kimoto,
“Reduction of C-related Defects near SiO₂/SiC Interface,”
Mini-Conference on Materials, Processing and Fabrication of Advanced Wide Bandgap Power Devices (Columbus/Online, 2021), 2-1.

K. Ito and T. Kimoto,
“Modeling of MOSFET Characteristics,”
Mini-Conference on Materials, Processing and Fabrication of Advanced Wide Bandgap Power Devices (Columbus/Online, 2021), 2-2.

T. Kimoto, K. Tachiki, T. Kobayashi, and Y. Matsushita,
“Reduction of interface state density in the SiC MOS structures by a non-oxidation process” (invited),
2021 Int. Conf. on Solid State Devices and Materials (virtual, 2021), D-4-01.

K. Mikami, K. Ito, K. Tachiki, and T. Kimoto,
“Channel mobility of NO- and N₂-annealed 4H-SiC(0001) p-channel MOSFETs with various donor concentrations of n-body”,
Europ. Conf. on Silicon Carbide and Related Materials 2020-2021 (Tours, France/Online, 2021), Tu-1B-01.

K. Ito, M. Horita, J. Suda, and T. Kimoto,
“Universal Mobility in SiC MOSFETs with Very Low Interface State Density”,
Europ. Conf. on Silicon Carbide and Related Materials 2020-2021 (Tours, France/Online, 2021), Tu-1B-02.

K. Tachiki, K. Ito, M. Kaneko, and T. Kimoto,
“Mobility improvement in 4H-SiC MOSFETs by H₂ etching before SiO₂ deposition and interface nitridation” (invited),
Europ. Conf. on Silicon Carbide and Related Materials 2020-2021 (Tours, France/Online, 2021), TU-1B-Inv.

E. Do, M. Kaneko, and T. Kimoto,
“Expansion patterns of single Shockley stacking faults from mechanical scratches on 4H-SiC epilayers”,
Europ. Conf. on Silicon Carbide and Related Materials 2020-2021 (Tours, France/Online, 2021), Tu-2B-01.

M. Hara, H. Tanaka, M. Kaneko, and T. Kimoto,
“Ideal Thermionic Field Emission and Field Emission Transport through Metal/Heavily-Doped SiC Schottky Barriers”,
Europ. Conf. on Silicon Carbide and Related Materials 2020-2021 (Tours, France/Online, 2021), Tu-3B-01.

R. Ishikawa, M. Hara, H. Tanaka, M. Kaneko, and T. Kimoto,
“Anisotropy of electron mobility in 4H-SiC over wide ranges of donor concentration and temperature”,
Europ. Conf. on Silicon Carbide and Related Materials 2020-2021 (Tours, France/Online, 2021), Tu-4B-01.

T. Matsuoka, M. Kaneko, and T. Kimoto,
“Sulfur ion implantation into SiC: Deep and double donor”,
Europ. Conf. on Silicon Carbide and Related Materials 2020-2021 (Tours, France/Online, 2021), We-3B-01.

K. Takahashi, H. Tanaka, M. Kaneko, and T. Kimoto,
“Impacts of High-Concentration Carrier Traps on Electrical Characteristics of p-i-n Diodes on HPSI SiC Substrates”,
Europ. Conf. on Silicon Carbide and Related Materials 2020-2021 (Tours, France/Online, 2021), We-3A-03.

N. Maeda, M. Kaneko, H. Tanaka, and T. Kimoto,
“SPICE model reproducing the static and dynamic characteristics of a SiC complementary JFET inverter from 300 to 573 K”,
Europ. Conf. on Silicon Carbide and Related Materials 2020-2021 (Tours, France/Online, 2021), We-P-16.

M. Kaneko, M. Nakajima, and T. Kimoto,
“Suppression of a logic-threshold-voltage shift in a SiC complementary JFET logic gate at high temperature”,
Europ. Conf. on Silicon Carbide and Related Materials 2020-2021 (Tours, France/Online, 2021), Th-1A-01.

T. Kimoto, M. Kaneko, T. Kobayashi, H. Tanaka, K. Tachiki, A. Iijima, S. Yamashita, X. Chi, Y. Zhao, D. Stefanakis, and Y. Matsushita,
“A New Horizon of SiC Technology Driven by Deeper Understanding of Physics” (plenary),
Europ. Conf. on Silicon Carbide and Related Materials 2020-2021 (Tours, France/Online, 2021), Th-PS-01.

T. Kimoto, M. Kaneko, K. Tachiki, K. Ito, R. Ishikawa, X. Chi, D. Stefanakis, T. Kobayashi, and H. Tanaka,
“Physics and Innovative Technologies in SiC Power Devices” (invited),
67th IEEE Int. Electron Devices Meeting (San Francisco, 2021), 36-1.