International Journals

S. Nakazawa, T. Okuda, J. Suda, T. Nakamura, and T. Kimoto,“Interface properties of 4H-SiC (11-20) and (1-100) MOS structures annealed in NO”,
IEEE Trans. Electron Devices, 62, 309-315 (2015).

N. Kaji, H. Niwa, J. Suda, and T, Kimoto, “Ultrahigh-voltage SiC p-i-n diodes with improved forward characteristics”,
IEEE Trans. Electron Devices, 62, 374-381 (2015).

K. Fukuda, D. Okamoto, M. Okamoto, T. Deguchi, T. Mizushima, K. Takenaka, H. Fujiwsawa, S. Harada, Y. Tanaka, Y. Yonezawa, T. Kato, S. Katakami, M. Arai, M. Takei, S. Matsunaga, K. Takeo, T. Shinohe, T. Izumi, T. Hayashi, S. Ogata, K. Asano, H. Okumura, and T. Kimoto, “Development of ultrahigh-voltage SiC devices”,
IEEE Trans. Electron Devices, 62, 396-404 (2015).

N. Thierry-Jebali, C. Kawahara, T. Miyazawa, H. Tsuchida, and T. Kimoto, “Application of UV photoluminescence imaging spectroscopy for stacking faults identification on thick, lightly n-type doped, 4°-off 4H-SiC”,
AIP Advances, 5, 037121/1-12 (2015).

T. Iwata, Y. Nishi, and T. Kimoto, “Dominant conduction mechanism in NiO-based resistive memories”,
J. Appl. Phys., 117, 225701/1-10 (2015).

S. Asada, T. Okuda, T. Kimoto, and J. Suda, “Temperature dependence of current gain in 4H-SiC bipolar junction transistors”,
Jpn. J. Appl. Phys., 54, 04DP13/1-3 (2015).

N. Kaji, J. Suda, and T. Kimoto, “Temperature dependence of forward characteristics for ultrahigh-voltage SiC p-i-n diodes with a long carrier lifetime”,
Jpn. J. Appl. Phys., 54, 098004/1-3 (2015).

T. Okuda, G. Alfieri, T. Kimoto, and J. Suda, “Oxidation-induced majority and minority carrier traps in n- and p-type 4H-SiC”,
Appl. Phys. Exp., 8, 111301/1-4 (2015).

T. Hatakeyama, M. Sometani, K. Fukuda, H. Okumura, and T. Kimoto, “Characterization of traps in SiC/SiO₂ interfaces close to the conduction band by deep-level transient spectroscopy”,
Jpn. J. Appl. Phys., 54, 111301/1-3 (2015).

H. Niwa, J. Suda, and T. Kimoto, “Impact ionization coefficients in 4H-SiC toward ultrahigh-voltage power devices”,
IEEE Trans. Electron Devices, 62, 3326-3333 (2015).

H. Sasakura, Y. Nishi, and T. Kimoto, “Temperature dependence of conductance in NiO-based resistive switching memory showing two modes in the forming process”,
Appl. Phys. Lett., 107, 233510/1-4 (2015).

Review Article

T. Kimoto, “Material science and device physics in SiC technology for high-voltage power devices” (invited review paper),
Jpn. J. Appl. Phys., 54, 040103/1-27 (2015).

Conference Proceedings

N. Thierry-Jebali, C. Kawahara, T. Miyazawa, H. Tsuchida, and T. Kimoto, “Identification of stacking faults by UV photoluminescence imaging spectroscopy on thick, lightly-doped n-type 4°-off 4H-SiC epilayers”,
Mater. Sci. Forum, 821-823, 323-326 (2015).

T. Kobayashi, J. Suda, and T. Kimoto, “Influence of conduction-type on thermal oxidation rate in SiC(0001) with various doping densities”,
Mater. Sci. Forum, 821-823, 456-459 (2015).

M. Yoshikawa, H. Seki, K. Inoue, T. Kobayashi, and T. Kimoto, “Characterization of inhomogeneity in SiO₂ films on 4H-SiC epitaxial substrate by a combination of fourier transform infrared spectroscopy and cathodoluminescence spectroscopy”,
Mater. Sci. Forum, 821-823, 460-463 (2015).

Y. Yonezawa , T. Mizushima, K. Takenaka, H. Fujisawa, T. Deguchi, T. Kato, S. Harada, Y. Tanaka, D. Okamoto, M. Sometani, M. Okamoto, M. Yoshikawa, T. Tsutsumi, Y. Sakai, N. Kumagai, S. Matsunaga, M. Takei, M. Arai, T. Hatakeyama, K. Takao, T. Shinohe, T. Izumi, T. Hayashi, K. Nakayama, K. Asano, M. Miyajima, H. Kimura, A. Otsuki, K. Fukuda, H. Okumura, and T. Kimoto, “Device performance and switching characteristics of 16 kV ultrahigh-voltage SiC flip-type n-channel IE-IGBTs”,
Mater. Sci. Forum, 821-823, 842-846 (2015).

K. Sato, K. Adachi, H. Okamoto, H. Yamaguchi, T. Kimoto, and J. Suda, “High-temperature operation of electrostatically-excited single-crystalline 4H-SiC microcantilever resonators”,
Mater. Sci. Forum, 821-823, 914-918 (2015).

International Presentations

T. Kimoto, “Overview of strategic WBG power semiconductor programs in Japan” (invited),
Int. SiC Power Electronics Applications Workshop 2015 (Stockholm, 2015), I-3.

T. Kimoto, “Ultrahigh-voltage technology based on SiC bipolar devices” (invited),
Int. SiC Power Electronics Applications Workshop 2015 (Stockholm, 2015), VI-2.

T. Kimoto, “Frontiers and future challenges of SiC power devices” (invited lecture),
TIA Power Electronics Summer School 2015 (Tsukuba, 2015), III-2.

T. Kimoto, “High-quality SiC epitaxial growth using standard chemistry” (invited),
1st Int. Symp. SiC Spintronics (Vadstena, 2015), VII-4.

T. Kimoto, K. Kawahara, B. Zippelius, and T. Hiyoshi, “Control of carbon vacancy defects in SiC” (invited),
1st Int. Symp. SiC Spintronics (Vadstena, 2015), VIII-1.

J. Suda and T. Kimoto, “Carrier lifetime control for ultrahigh-voltage SiC bipolar power devices” (invited),
Int. Workshop on Frontier Photonic and Electronic Materials and Devices 2015 (Kyoto, 2015), Tu-4.

T. Kimoto, “Progress and future challenges of SiC material and power devices” (invited),
Int. Workshop on Ultra-Precision Processing for Wide Bandgap Semiconductors 2015 (Fukuoka, 2015), I-2.

T. Kimoto, K. Kawahara, B. Zippelius, E. Saito, and J. Suda, “Control of carbon vacancy in SiC toward ultrahigh-voltage power devices” (invited),
16th Int. Conf. on Defects-Recognition, Imaging, and Physics in Semiconductors (Suzhou, 2015), ITU09.

Y. Katsu, T. Hosoi, Y. Nanen, T. Kimoto, T. Shimura, and H. Watanabe, “Impact of NO annealing on flatband voltage instability due to charge trapping in SiC MOS devices” (invited),
Int. Conf. on Silicon Carbide and Related Materials 2015 (Giardini Naxos, Italy, 2015), Mo-IP-1.

T. Kobayashi, T. Okuda, J. Suda, and T. Kimoto, “Accurate evaluation of interface state densities of 4H-SiC(0001) MOS structures annealed in POCl₃ by C-ψs method”,
Int. Conf. on Silicon Carbide and Related Materials 2015 (Giardini Naxos, Italy, 2015), Mo-2A-2.

S. Asada, T. Okuda, T. Kimoto, and J. Suda, “Temperature dependence of Hall scattering factor in p-type 4H-SiC with various doping concentrations”,
Int. Conf. on Silicon Carbide and Related Materials 2015 (Giardini Naxos, Italy, 2015), Tu-1A-2.

T. Kimoto, N. Kaji, K. Yamada, H. Niwa,J. Suda, Y. Yonezawa, K. Fukuda, and H. Okumura, “Ultrahigh-voltage SiC bipolar devices for future power infrastructure” (invited),
Int. Conf. on Silicon Carbide and Related Materials 2015 (Giardini Naxos, Italy, 2015), Tu-2A-1.

T. Okuda, T. Kimoto, and J. Suda, “Enhancement of carrier lifetimes in p-type 4H-SiC epitaxial layers” (invited),
Int. Conf. on Silicon Carbide and Related Materials 2015 (Giardini Naxos, Itary, 2015), We-1A-1.

E. Saito, J. Suda, and T. Kimoto, “Control of carrier lifetimes in thick n-type 4H-SiC epilayers by high-temperature annealing”,
Int. Conf. on Silicon Carbide and Related Materials 2015 (Giardini Naxos, Italy, 2015), We-1A-3.

H. Niwa, J. Suda, and T. Kimoto, “Impact ionization coefficients and critical electric field strength in 4H-SiC”,
Int. Conf. on Silicon Carbide and Related Materials 2015 (Giardini Naxos, Italy, 2015), Th-3A-3.

K. Yamada, H. Niwa, T. Okuda, J. Suda, and T. Kimoto, “Promise and limitation of ultrahigh-voltage SiC PiN diodes with long carrier lifetimes studied by device simulation”,
Int. Conf. on Silicon Carbide and Related Materials 2015 (Giardini Naxos, Italy, 2015), Th-3A-5.

X. T. Trinh, V. Ivády, K. Kawahara, J. Suda, T. Kimoto, A. Gali, I. A. Abrikosov, E. Janzén, and N.T. Son, “Carbon interstitial clusters in 4H-SiC”,
Int. Conf. on Silicon Carbide and Related Materials 2015 (Giardini Naxos, Italy, 2015), Th-3B-2.

H. Seki, M. Yoshikawa, T. Kobayashi, and T. Kimoto, “Characterization of the interfacial chemical structure of silicon dioxide on 4H-SiC(0001) by Fourier transform infrared spectroscopy”,
Int. Conf. on Silicon Carbide and Related Materials 2015 (Giardini Naxos, Italy, 2015), Mo-P-2.

M. Yoshikawa, H. Seki, K. Kosaka, R. Sugie, J. Sameshima, and T. Kimoto, “Characterization of stress around 4H-SiC metal-oxide semiconductor field-effect transistor (MOSFET) using Raman spectroscopy”,
Int. Conf. on Silicon Carbide and Related Materials 2015 (Giardini Naxos, Italy, 2015), Mo-P-3.

K. Murakami, S. Tanai, T. Okuda, T. Kimoto, and T. Umeda, “ESR study on hydrogen passivation of intrinsic defects in p-type and semi-insulating 4H-SiC”,
Int. Conf. on Silicon Carbide and Related Materials 2015 (Giardini Naxos, Italy, 2015), Mo-P-7.

H. Fujihara, J. Suda, and T. Kimoto, “Electrical properties of n-type and p-type layers formed by ion implantation into high-purity semi-insulating 4H-SiC substrates”,
Int. Conf. on Silicon Carbide and Related Materials 2015 (Giardini Naxos, Italy, 2015), Mo-P-52.

T. Kobayashi, S. Nakazawa, T. Okuda, J. Suda, and T. Kimoto, “Cause for the mobility drop in SiC MOSFETs with heavily-doped p-bodies”,
Int. Conf. on Silicon Carbide and Related Materials 2015 (Giardini Naxos, Italy, 2015), Mo-P-58.

M. Kato, K. Kohama, H. Shibata, M. Ichimura, and T. Kimoto, “Surface recombination velocities for polished p-type 4H-SiC”,
Int. Conf. on Silicon Carbide and Related Materials 2015 (Giardini Naxos, Italy, 2015), Tu-P-59.

T. Okuda, T. Kimoto, and J. Suda, “Oxidation-induced majority and minority carrier traps in n- and p-type 4H-SiC”,
Int. Conf. on Silicon Carbide and Related Materials 2015 (Giardini Naxos, Italy, 2015), We-P-25.

T. Okuda, T. Kobayashi, T. Kimoto, and J. Suda, “Surface passivation on p-type 4H-SiC epitaxial layers by deposited SiO₂ with POCl₃ annealing”,
Int. Conf. on Silicon Carbide and Related Materials 2015 (Giardini Naxos, Italy, 2015), Th-P-14.

H. Tanaka, J. Suda, and T. Kimoto, “Ballistic and quasi ballistic hole transport properties in germanium nanowire pMOSFETs based on an extended “top of the barrier” model”,
2015 Int. Conf. on Solid State Devices and Materials (Sapporo, Japan, 2015), K-6-2.

M. Kaneko, T. Kimoto, and J. Suda, “Effect of initial III/V ratio on formation of threading dislocations in PAMBE-grwon AlN layers on SiC substrates”,
6th Int. Symp. on Growth of III-Nitrides (Hamamatsu, Japan, 2015), We-A34.

M. Kaneko, T. Kimoto, and J. Suda, “Observation of lateral satellite peaks in nitride semiconductor: HRXRD study of AlN layer grown on step-height-controlled SiC substrate”,
6th Int. Symp. on Growth of III-Nitrides (Hamamatsu, Japan, 2015), Tu-B37.

H. Sasakura, Y. Nishi, and T. Kimoto, “Quantized conductance in Pt/NiO/Pt cells showing two modes in forming process and resistive switching”,
2015 Mater. Res. Soc. Fall Meeting (Boston, USA, 2015), KK9.08.

Y. Nishi, Y. Kuriyama, and T. Kimoto, “Difference of resistance switching characteristics in NiO-Based ReRAM cells between Pt and Ag as top electrodes”,
2015 Mater. Res. Soc. Fall Meeting (Boston, USA, 2015), KK10.15.

M. Kaneko, T. Kimoto, and J. Suda, “Strain controls in AlN layer by ultra-thin GaN interlayer grown on high-quality AlN template coherently grown on SiC(0001) by PAMBE”,
11th Int. Conf. on Nitride Semiconductors (Beijing, China, 2015), ThEO9.

H. Tanaka, J. Suda, and T. Kimoto, “Impacts of surface roughness scattering on hole mobility in germanium nanowires”,
2015 Silicon Nanoelectronics Workshop (Kyoto, Japan, 2015), 3-5.

H. Fujihara, H. Tanaka, N. Morioka, J. Suda, and T. Kimoto, “Impacts of orientation and cross-sectional shape on hole mobility of Si nanowire MOSFETs”,
IEEE 2015 Int. Meeting for Future of Electron Devices (Osaka, 2015) B-3.

J. Suda, T. Okuda, and T. Kimoto, “Hydrogen passivation of unknown lifetime-killing defects in Al-doped p-type 4H-SiC epitaxial layers”,
57^th Electronic Material Conf. (Columbus, USA, 2015), BB6.

T. Kimoto, “Progress and future challenges of SiC material and power devices” (invited),
Int. Sympo. on Power Electronics of Advanced WBG Semiconductors (Kyoto, Japan, 2015), III-1.

M. Horita, S. Takashima, R. Tanaka, K. Ueno, M. Edo, and J. Suda, “Hall-effect measurement of metalorganic-vapor-phase-epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations”,
The 6^th International Symposium on Growth of III-Nitrides (Hamamatsu, Japan, 2015), Tu-B.