2021

International Journals

K. Tachiki and T. Kimoto
“Improvement of Both n- and p-Channel Mobilities in 4H-SiC MOSFETs by High-Temperature N2 Annealing,”
IEEE Trans. Electron Devices, 68, 638 (2021).

K. Tachiki, M. Kaneko, and T. Kimoto
“Mobility improvement of 4H-SiC (0001) MOSFETs by a three-step process of H2 etching, SiO2 deposition, and interface nitridation,”
Appl. Phys. Express, 14, 031001 (2021).

K. Tachiki, T. Ono, T. Kobayashi, and T. Kimoto,
“Short-Channel Effects in SiC MOSFETs Based On analyses of Saturation Drain Current,”
IEEE Trans. Electron Devices, 68, 1382 (2021).

M. Hara, M. Kaneko, and T. Kimoto,
“Nearly Fermi-level-pinning-free interface in metal/heavily-doped SiC Schottky structures,”
Jpn. J. Appl. Phys., 60, SBBD14 (2021).

Q. Jin, M. Nakajima, M. Kaneko, and T. Kimoto,
“Lateral spreads of ion-implanted Al and P atoms in silicon carbide,”
Jpn. J. Appl. Phys., 60, 051001 (2021).

E. Do, M. Kaneko, and T. Kimoto,
”Expansion patterns of single Shockley stacking faults from scratches on 4H-SiC,”
Jpn. J. Appl. Phys., 60, 068001 (2021).

R. Ishikawa, M. Hara, H. Tanaka, M. Kaneko, and T. Kimoto,
”Electron mobility along <0001> and <1-100> directions in 4H-SiC over a wide range of donor concentration and temperature,”
Appl. Phys. Express, 14, 061005 (2021).

M. Sato, H. Tanaka, and T. Kimoto,
“Orientation and size effects on electronic structure of rectangular cross-sectional Sn nanowires,”
J. Appl. Phys., 129, 224302 (2021).

International Presentations

T. Kimoto,
“WISE Program: Innovation of Advanced Photonic and Electronic Devices” (invited),
Int. Workshop on Education and Research for Future Electronics (Nagoya, Japan, 2021), IT3.

T. Kimoto, T. Kobayashi, K. Tachiki, K. Ito, and M. Kaneko,
“Progress and Future Challenges of SiC Power MOSFETs” (invited),
5th IEEE Electron Devices Technology and Manufacturing Conference 2021 (Chengdu, China/Online, 2021), FR2A2-2.

F. Udrea, K. Naydenov, H. Kang, T. Kato, E. Kagoshima, T. Nishiwaki, H. Fujiwara, and T. Kimoto,
“The FinFET Effect in Silicon Carbide MOSFETs,”
33rd Int. Symp. on Power Semiconductor Devices & ICs (ISPSD) 2021 (Nagoya/Online, 2021), 4-2.