International Journals

K. Mikami, K. Tachiki, M. Kaneko, and T. Kimoto,
“Insight into mobility improvement by the oxidation-minimizing process in SiC MOSFETs,”
IEEE Trans. Electron Devices, 71, 931 (2024).

R. Ishikawa, H. Tanaka, M. Kaneko, and T. Kimoto,
”Origin of hole mobility anisotropy in 4H-SiC,”
Journal of Applied Physics 135, 075704 (2024).

H. Fujii, M. Kaneko, and T. Kimoto,
“Generation of deep levels near the 4H-SiC surface by thermal oxidation,”
Appl. Phys. Express 17, 041004 (2024).

M. Kaneko, T. Matsuoka, and T. Kimoto,
“High electron mobility in heavily sulfur-doped 4H-SiC,”
J. Appl. Phys. 135, 205702 (2024).

K. Kuwahara, T. Kitawaki, M. Hara, M. Kaneko, and T. Kimoto,
“Formation of ohmic contacts on heavily Al⁺-implanted p-type SiC without an alloying process,”
Jpn. J. Appl. Phys. 63, 050903 (2024).

H. Fujii, M. Kaneko, and T. Kimoto,
“Depth profiles of deep levels generated in the tail region of Al ion implantation into n-type 4H-SiC,”
Jpn. J. Appl. Phys. 63, 061003 (2024).

K. Mikami, M. Kaneko, and T. Kimoto,
“High-Mobility 4H-SiC p-Channel MOSFETs on Nonpolar Faces,”
IEEE Electron Device Lett., 45, 1113 (2024).

K. Ito, H. Tanaka, M. Horita, J. Suda, and T. Kimoto,
“Influence of fixed charges and trapped electrons on free electron mobility at 4H-SiC(0001)/SiO₂ interfaces with gate oxides annealed in NO or POCl₃,”
Appl. Phys. Express 17, 081003 (2024).

S. Kozakai, H. Fujii, M. Kaneko, and T. Kimoto,
“Depth profiles of electron and hole traps generated by reactive ion etching near the surface of 4H-SiC,”
J. Appl. Phys. 136, 095702 (2024).

T. Kimoto,
“How we made the 1,000 V silicon carbide Schottky diode,”
Nature Electronics 7, 933 (2024).
(doi: 10.1038/s41928-024-01252-7)

S. Toshimitsu, K. Tachiki, M. Kaneko, and T. Kimoto,
“Demonstration of SiC n-channel MOSFETs fabricated on a high-purity semi-insulating substrate and investigation of the short-channel effects,”
Jpn. J. Appl. Phys. 63, 090905 (2024).

K. Ito, M. Horita, J. Suda, and T. Kimoto,
“Impact of Coulomb scattering due to trapped electrons on Hall mobilities in 4H-SiC(1120) and (1100) MOSFETs annealed in NO,”
Jpn. J. Appl. Phys. 63, 110903 (2024).

T. Kitawaki, X. Chi, M. Kaneko, and T. Kimoto,
“Impact ionization coefficients along 4H-SiC <1120> in a wide temperature range,”
Jpn. J. Appl. Phys. 63, 118004 (2024).

H. Fujii, M. Kaneko, and T. Kimoto,
“Depth profiles of hole traps in the tail region of Al ion implantation into p-type 4H-SiC,”
Jpn. J. Appl. Phys. 63, 118002 (2024).

Review Article

M. Hara, T. Kitawaki, H. Tanaka, M. Kaneko, and T. Kimoto,
“Tunneling current through non-alloyed metal/heavily-doped SiC interfaces,”
Materials Science in Semiconductor Processing 171, 108023 (2024).

H. Tanaka, T. Kimoto, and N. Mori,
“Theoretical study on high-field carrier transport and impact ionization
coefficients in 4H-SiC,”
Materials Science in Semiconductor Processing, 173, 108126 (2024).

Conference Proceedings

R. Ishikawa, M. Kaneko, and T. Kimoto,
“Estimation of Electron Drift Mobility along the c-Axis in 4H-SiC by Using Vertical Schottky Barrier Diodes,”
Solid State Phenomena 360, 205-210 (2024).

T. Kimoto, M. Kaneko, K. Tachiki, K. Ito, K. Mikami, H. Fujii, A. Inoue, and N. Maeda,
“An Overview of SiC High-Voltage Power Devices and High-Temperature ICs,”
Proc. of 2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (Fort Lauderdale, USA, 2024), pp. 88-94.

International Presentations

T. Kimoto,
“SiC MOS Physics and Performance Improvement of SiC Power MOSFETs” (invited),
Japan-UK Joint Webinar in Semiconductor Research (Online, 2024), 2-2.

T. Kimoto,
“Silicon Carbide: the new frontier for power electronics” (invited),
Cambridge Colloquium on Power Semiconductor Devices 2024 (Cambridge, 2024).

T. Kimoto,
“Fundamentals of SiC Power Devices – Performance and Reliability” (invited lecture),
Short Course of The 36th Int. Sympo. on Power Semiconductor Devices and ICs (ISPSD 2024) (Bremen, 2024), 1.

M. Kaneko and T. Kimoto,
“SiC Complementary JFET Logic Gates: An Emerging Technology for High-Temperature Electronics,”
International Conference and Exhibition High Temperature Electronics Network (HiTEN2024) (Edinburgh, 2024), 03:00PM

M. Kaneko, K. Tachiki, K. Mikami, H. Fujii, and T. Kimoto,
“Mobility enhancement in SiC n- and p-channel MOSFETs” (invited),
Int. Conf. on Silicon Carbide and Related Materials 2024 (Raleigh, USA, 2024), 7B.

K. Mikami, M. Kaneko, and T. Kimoto,
“Doping-dependent fixed charges in SiC MOSFETs” (invited),
Int. Conf. on Silicon Carbide and Related Materials 2024 (Raleigh, USA, 2024), 8B.

H. Tomita, H. Fujioka, K. Uchimaru, E. Kagoshima, H. Naruoka, T. Nishiwaki, H. Fujiwara, K. Yamasue, Y. Cho, and T. Kimoto
“4H-SiC Vertical Trench Power MOSFET Fabricated by Oxidation-Minimizing Process,”
Int. Conf. on Silicon Carbide and Related Materials 2024 (Raleigh, USA, 2024), 8B.

K. Kuwahara, M. Kaneko, and T. Kimoto,
“Formation of Pt ohmic contacts on p-type SiC with low contact resistivity by 600°C-annealing process,”
Int. Conf. on Silicon Carbide and Related Materials 2024 (Raleigh, USA, 2024), 13B.

K. Maeda, K. Kuwahara, M. Hara, M. Kaneko, and T. Kimoto,
“Formation of Ti-based ohmic contacts on n-type SiC with ρ_C= 6×10^-8 Ωcm²,”
Int. Conf. on Silicon Carbide and Related Materials 2024 (Raleigh, USA, 2024), 13B.

R. Ito, A. Inoue, K. Mikami, M. Kaneko, and T. Kimoto,
“Effect of counter-doping on threshold voltage and mobility in SiC p-channel MOSFETs,”
Int. Conf. on Silicon Carbide and Related Materials 2024 (Raleigh, USA, 2024), 19B.

H. Tanaka, T. Kimoto, and N. Mori,
“Monte Carlo analyses on impact ionization coefficients in 4H-SiC” (invited),
Int. Conf. on Silicon Carbide and Related Materials 2024 (Raleigh, USA, 2024), 21A.

R. Ishikawa, M. Kaneko, and T. Kimoto
“Low-field and high-field anisotropic electron transport in 4H-SiC,”
Int. Conf. on Silicon Carbide and Related Materials 2024 (Raleigh, USA, 2024), 21A.

M. Hara, T. Kitawaki, K. Kuwahara, H. Tanaka, M. Kaneko, and T. Kimoto,
“Tunneling Phenomena and Ohmic Contact Formation at Non-Alloyed Metal/Heavily-Doped SiC Interfaces” (invited), 
Pacific Rim Meeting on Electrochemical and Solid State Science 2024 (PRiME2024) (Honolulu, 2024), H04-2520.

T. Kimoto, R. Ishikawa, X. Chi, K. Mikami, K. Tachiki, and M. Kaneko,
“Impacts of Anisotropic Material Properties on Performance of SiC Power Devices” (invited),
Pacific Rim Meeting on Electrochemical and Solid State Science 2024 (PRiME2024) (Honolulu, 2024), G03-2294.

T. Kimoto, M. Kaneko, K. Tachiki, K. Ito, K. Mikami, H. Fujii, A. Inoue, R. Ito, and N. Maeda,
“SiC High-Voltage Power Devices and High-Temperature ICs” (invited),
2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium,
(Fort Lauderdale, USA, 2024), 3a.1.

T. Oka, K. Sato, T. Maekawa, Y. Oku, K. Nakahara, and T. Kimoto,
“High C/Si Ratio Growth of 4H-SiC on Epitaxial Graphene/4H-SiC Substrates,”
Int. Workshop on Advanced Epitaxy for Freestanding Membranes and 2D
Materials (Tokyo, 2024), 1-9.

M. Hara, T. Nabatame, T. Sawada, M. Miyamoto, H. Miura, Y. Irokawa, T. Kimoto, and Y. Koide, 
“Crystal-face-dependent electron trapping behavior under high-field stress in Al₂O₃/GaN MOS structures fabricated through a dummy SiO₂ process,”
International Workshop on Nitride Semiconductors 2024 (IWN2024) (Honolulu, USA, 2024), Advanced Characterization Methods 7.

T. Oka, K. Sato, T. Maekawa, Y. Oku, K. Nakahara, and T. Kimoto,
“Effect of Growth Conditions on SiC Remote Epitaxy,”
2024 Mater. Res. Soc. Fall Meeting & Exhibit (Boston, 2024), NM04.09.04.

X. Chi, K. Ito, T. Suto, A. Shima, M. Kaneko, and T. Kimoto,
“Unique electron trapping and its impacts on electron mobility in SiC n-channel MOSFETs”,
70th IEEE Int. Electron Devices Meeting (San Francisco, 2024), 40-4.