Applied Physics Lettersにて発表した論文”Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy”（著者: Kazutaka Kanegae, Hajime Fujikura, Yohei Otoki, Taichiro Konno, Takehiro Yoshida, Masahiro Horita, Tsunenobu Kimoto, and Jun Suda）がAPLの”Editor’s Pick”に選ばれました。