浅田聡志

浅田聡志 (Satoshi Asada)
博士後期課程学生 日本学術振興会 特別研究員(DC1)
趣味: ランニング, 将棋

研究テーマ

SiC バイポーラトランジスタの性能向上に向けた基礎研究

経歴

2010年3月 帝塚山高校(奈良) 卒業
2014年3月 京都大学 電気電子工学科 卒業
2016年3月 京都大学 工学研究科 電子工学専攻 博士前期課程 修了
2016年4月- 現在 京都大学 工学研究科 電子工学専攻 博士後期課程
2016年4月- 現在 日本学術振興会 特別研究員 DC1
2017年4-6月 Linkoping大学 (Sweden) IFM, 半導体材料分野 特別研究学生

論文

[1] S. Asada, T. Okuda, T. Kimoto, and J. Suda, “Temperature dependence of current gain in 4H-SiC bipolar junction transistors”, Jpn. J. Appl. Phys. 54, 04DP13/1-3 (2015).

[2] S. Asada, T. Okuda, T. Kimoto, and J. Suda, “Hall scattering factors in p-type 4H-SiC with various doping concentrations”, Appl. Phys. Exp. 9, 041301/1-4 (2016).

[3] S. Asada, T. Kimoto and J. Suda, “Design Criterion for SiC BJTs to Avoid ON-Characteristics Degradation Due to Base Spreading Resistance”, IEEE Trans. on Electron Devices 64, 2086-2091 (2017).

[4] S. Asada, T. Kimoto and J. Suda, “Effect of Postoxidation Nitridation on Forward Current–Voltage Characteristics in 4H–SiC Mesa p-n Diodes Passivated With SiO2“, IEEE Trans. on Electron Devices 64, 3016-3018 (2017).

[5] S. Asada, T. Kimoto and I. G. Ivanov, “Calibration on wide-ranging aluminum doping concentrations by photoluminescence in high-quality uncompensated p-type 4H-SiC“, Appl. phys. Lett. 111, 072101/1-5 (2017). [AIP publishingの”Scilight”に採択]

[6] S. Asada, J. Suda, and T. Kimoto, “Effects of Parasitic Region in SiC Bipolar Junction Transistors on Forced Current Gain”, Material Science Forum 924, 629-632 (2018).

[7] S. Asada, J. Suda, and T. Kimoto, “Impacts of Finger Numbers on ON-State Characteristics in Multi-Finger SiC BJTs with Low Base Spreading Resistance”, IEEE Trans. on Electron Devices 65, 2771-2777 (2018).

[8] S. Asada, J. Suda, and T. Kimoto, “Analytical formula for temperature dependence of resistivity in p-type 4H-SiC with wide-range doping concentrations”, Jpn. J. Appl. Phys. 57, 088002/1-4 (2018).

[9] H. Tanaka, S. Asada, T. Kimoto, and J. Suda, “Theoretical analysis of Hall factor and hole mobility in p-type 4H-SiC considering anisotropic valence band structure”, J. Appl. Phys. 123, 245704/1-10 (2018).

[10] T. Kimoto, H. Niwa, T. Okuda, E. Saito, Y. Zhao, S. Asada, and J. Suda, “Carrier lifetime and breakdown phenomena in SiC power device material”, J. Phys. D: Appl. Phys. 51, 363001/1-21 (2018). [Topical Review]

[11] S. Asada, J. Suda, and T. Kimoto, “Determination of Surface Recombination Velocity From Current–Voltage Characteristics in SiC p-n Diodes”, IEEE Trans. on Electron Devices 65, 4786-4791 (2018).

国際会議

[1] S. Asada, T. Okuda, T. Kimoto, and J. Suda, “Temperature dependence of current gain in 4H-SiC bipolar junction transistors”, Int. Conf. of Solid State Devices & Materials (Tsukuba, Japan, 2014), E-4-3, Oral.

[2] S. Asada, T. Okuda, T. Kimoto, and J. Suda, “Temperature dependence of Hall scattering factor in p-type 4H-SiC with various doping concentrations”, Int. Conf. on Silicon Carbide and Related Materials 2015 (Giardini Naxos, Italy, 2015), Tu-1A-2, Oral.

[3] S. Asada, T. Kimoto, and J. Suda, “Origin of shunt current in 4H-SiC mesa p-n diodes passivated by SiO2 with post-oxidation nitridation”, Europ. Conf. on Silicon Carbide and Related Materials 2016 (Halkidiki, Greece, 2016), Mo3.01, Oral.

[4] H. Tanaka, S. Asada, T. Kimoto, and J. Suda, “Theoretical analysis of hole density, hole mobility, and hall scattering factor in p-type 4H-SiC”, Europ. Conf. on Silicon Carbide and Related Materials 2016 (Halkidiki, Greece, 2016), Tu2a.04, Oral.

[5] S. Asada, J. Suda, and T. Kimoto, “Effects of parasitic region in SiC bipolar junction transistors on forced current gain”, Int. Conf. on Silicon Carbide and Related Materials 2017 (Washington DC, USA, 2017), WE.DP.8, Poster. (Student Poster Awardを受賞)

[6] S. Asada, T. Kimoto, and I. G. Ivanov, “Aluminum doping concentration calibration by photoluminescence in high-quality uncompensated p-type 4H-SiC”, Int. Conf. on Silicon Carbide and Related Materials 2017 (Washington DC, USA, 2017), MO.B2.5, Oral.

[7] S. Asada, J. Suda, and T. Kimoto, “Design criterion to avoid on-characteristics deterioration due to base spreading resistance in SiC bipolar junction transistors”, Asia-Pacific Workshop on Widegap Semiconductors 2017 (Qingdao, China, 2017), TUSCO 9, Oral.

[8] S. Asada, J. Suda, T. Kimoto, “Impacts of finger numbers on forced current gain in multi-finger 10 kV-class SiC bipolar junction transistors with reduced base spreading resistance”, Europ. Conf. on Silicon Carbide and Related Materials 2018 (Birmingham, UK, 2018), Tu.P.BP7, Poster.

受賞・派遣歴

  • 第三回パワーエレクトロニクスサマースクール, 奨励賞 (8/2014)
  • 平成28年度 京都大学大学院工学研究科 馬詰研究奨励賞 (7/2016)
  • 先進パワー半導体分科会 第3回講演会, 研究奨励賞 (11/2016, 共著)
  • 馬詰奨学金によりスウェーデンLinkoping大学へ派遣 (4-6/2017)
  • ICSCRM2017, Student Poster Award. (9/2017)