Applied Physics Lettersにて発表した論文”Critical electric field for transition of thermionic field emission/fiel […]
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日本学士院紀要の英語版(Proc. Japan Academy)に、木本教授のSiCパワー半導体に関するレビュー論文が掲載
木本教授のSiCパワー半導体に関するレビュー論文: “High-voltage SiC powerdevices for improved energy efficiency” が日本学士院紀要の […]
木本教授のAPEX Review論文がMost Readランキングの1位を獲得
SiCパワーデバイスの進展と欠陥制御を解説した木本教授のAPEX Review論文(Kimoto and Watanabe, Appl. Phys. Express 13, 120101 (2020)) が、APEX誌の […]
小林君のAPEX論文がMost Readランキングの1位を獲得
独自の手法で酸化膜/SiC界面を10倍高品質化した小林拓真君のAPEX論文(Appl. Phys. Express 13, 091003 (2020))が、APEX誌のMost Readランキングのトップを獲得しました。
Appl. Phys. Lett.にて発表した論文 “Estimation of the critical condition for expansion/contraction of single Shockley stacking faults in 4H-SiC PiN diodes” が “Editor’s Pick” に選出
Applied Physics Lettersにて発表した論文”Estimation of the critical condition for expansion/contraction of single […]
Appl. Phys. Lett.にて発表した論文 “Measurement of avalanche multiplication utilizing Franz-Keldysh effect in GaN p-n junction diodes with double-side-depleted shallow bevel termination” が “Editor’s Pick” に選出
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Appl. Phys. Lett.にて発表した論文 “Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy” が “Editor’s Pick” に選出
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IEEE Electron Device Lett.にて発表した論文 “Normally-off 400 °C Operation of n- and p-JFETs With a Side-Gate Structure Fabricated by Ion Implantation Into a High-Purity Semi-Insulating SiC Substrate” が “Editor’s pick” に選出
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Applied Physics Lettersにて発表した論文”Deep-ultraviolet light emission from 4H-AlN/4H-GaN short-period superlattice grown on 4H-SiC (11-20)”がAIP Publishingの”Editor’s pick”に選出
Applied Physics Lettersにて発表した論文”Deep-ultraviolet light emission from 4H-AlN/4H-GaN short-period superlattice g […]