Applied Physics Lettersにて発表した論文”Estimation of the critical condition for expansion/contraction of single […]
出版
Appl. Phys. Lett.にて発表した論文 “Measurement of avalanche multiplication utilizing Franz-Keldysh effect in GaN p-n junction diodes with double-side-depleted shallow bevel termination” が “Editor’s Pick” に選出
Applied Physics Lettersにて発表した論文”Measurement of avalanche multiplication utilizing Franz-Keldysh effect in GaN […]
Appl. Phys. Lett.にて発表した論文 “Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy” が “Editor’s Pick” に選出
Applied Physics Lettersにて発表した論文”Deep-level transient spectroscopy studies of electron and hole traps in […]
IEEE Electron Device Lett.にて発表した論文 “Normally-off 400 °C Operation of n- and p-JFETs With a Side-Gate Structure Fabricated by Ion Implantation Into a High-Purity Semi-Insulating SiC Substrate” が “Editor’s pick” に選出
IEEE Electron Device Lett.にて発表した論文 “Normally-off 400 °C Operation of n- and p-JFETs With a Side-Gate Str […]
IEEE Electron Device Lett.にて発表した論文” High-Temperature Operation of n- and p-Channel JFETs Fabricated by Ion Implantation Into a High-Purity Semi-Insulating SiC Substrate “がEDLの”Editor’s pick”に選出&表紙絵を飾る
IEEE Electron Device Lett.にて発表した論文” High-Temperature Operation of n- and p-Channel JFETs Fabricated by I […]
Applied Physics Lettersにて発表した論文”Deep-ultraviolet light emission from 4H-AlN/4H-GaN short-period superlattice grown on 4H-SiC (11-20)”がAIP Publishingの”Editor’s pick”に選出
Applied Physics Lettersにて発表した論文”Deep-ultraviolet light emission from 4H-AlN/4H-GaN short-period superlattice g […]
Applied Physics Lettersにて発表した論文”Calibration on wide-ranging aluminum doping concentrations by photoluminescence in high-quality uncompensated p-type 4H-SiC”がAIP Publishingの”Scilight”に選出
Applied Physics Lettersにて発表した論文”Calibration on wide-ranging aluminum doping concentrations by photoluminescenc […]
Applied Physics Expressにて発表した論文”Franz-Keldysh effect in n-type GaN Schottky barrier diode under large reverse bias”がSpotlightsに選出
Applied Physics Expressにて発表した論文”Franz-Keldysh effect in n-type GaN Schottky barrier diode under large re […]
木本教授のSiC半導体に関するレビュー論文が JJAP Most Cited Article に選出
木本教授のSiC半導体に関するレビュー論文: “Material science and device physics in SiC technology for high-voltage power dev […]
Kimoto and Cooper: “Fundamentals of Silicon Carbide Technology”が出版
木本教授が執筆したSiC半導体に関する著書 “Fundamentals of Silicon Carbide Technology” (Wiley) が出版されました(2014年9月 […]